2SC5096.pdf

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2SC5096
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5096
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.8dB, |S 21e | 2 = 7.5dB (f = 2 GHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
20
V
Collector-emitter voltage
V CEO
10
V
Emitter-base voltage
V EBO
1.5
V
Base current
I B
7
mA
Collector current
I C
15
mA
Collector power dissipation
P C
100
mW
Junction temperature
T j
125
°C
Storage temperature range
T stg
− 55~125
°C
JEDEC ―
JEITA
―
TOSHIBA
2-2H1A
Microwave Characteristics (Ta = 25°C)
Weight: 2.4 mg (typ.)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
f T
V CE = 6 V, I C = 7 mA
7
10
GHz
Insertion gain
S 21e 2 (1) V CE = 6 V, I C = 7 mA, f = 1 GHz
13
dB
S 21e 2 (2) V CE = 6 V, I C = 7 mA, f = 2 GHz
4.5
7.5
Noise figure
NF (1)
V CE = 6 V, I C = 3 mA, f = 1 GHz
1.4
dB
NF (2)
V CE = 6 V, I C = 3 mA, f = 2 GHz
1.8
3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 10 V, I E = 0
1 µ A
Emitter cut-off current
I EBO
EB = 1 V, I C = 0
1 µ A
DC current gain
h FE
(Note 1)
V CE = 6 V, I C = 7 mA
50
160
Output capacitance
C ob
0.5
pF
V CB = 10 V, I E = 0, f = 1 MHz (Note 2)
Reverse transfer capacitance
C re
0.4
0.85
pF
Note 1: h FE classification R: 50~100, O: 80~160
Note 2: C re is measured by 3 terminal method with capacitance bridge.
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S-Parameter Z O = 50 Ω , Ta = 25°C
V CE = 6 V, I C = 3 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.835
− 26.1
7.069
150.4
0.046
71.0
0.899
− 19.3
400
0.665
− 46.5
5.948
130.4
0.076
60.5
0.745
− 30.3
600
0.501
− 62.7
5.021
115.2
0.095
55.7
0.630
− 35.9
800
0.386
− 74.3
4.173
104.3
0.111
53.7
0.552
− 38.5
1000
0.297
− 83.7
3.592
95.6
0.124
53.2
0.500
− 39.9
1200
0.226
− 92.7
3.140
88.5
0.137
53.6
0.465
− 41.1
1400
0.175
− 101.9
2.808
82.3
0.152
54.1
0.442
− 42.2
1600
0.130
− 113.4
2.514
76.6
0.165
54.2
0.421
− 43.8
1800
0.103
− 128.0
2.293
71.7
0.179
53.9
0.405
− 45.7
2000
0.081
− 147.4
2.114
67.3
0.193
54.8
0.388
− 47.4
V CE = 6 V, I C = 7 mA
Frequency
S11
S21
S12
S22
(MHz)
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
200
0.668
− 40.0
12.306
138.9
0.040
67.3
0.786
− 27.0
400
0.427
− 64.4
8.852
116.1
0.061
61.6
0.579
− 35.0
600
0.280
− 79.5
6.591
102.9
0.078
61.8
0.476
− 35.9
800
0.193
− 89.7
5.191
94.3
0.096
62.5
0.420
− 35.0
1000
0.134
− 99.3
4.288
87.8
0.112
63.2
0.390
− 34.2
1200
0.088
− 112.3
3.661
81.9
0.130
63.8
0.374
− 34.0
1400
0.056
− 129.8
3.232
76.9
0.150
63.4
0.366
− 34.8
1600
0.035
− 169.0
2.857
72.1
0.168
62.5
0.356
− 36.6
1800
0.040
157.0
2.574
68.1
0.185
61.4
0.347
− 39.0
2000
0.054
131.5
2.363
64.3
0.203
61.3
0.338
− 40.2
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