2SC2995.pdf

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2SC2995
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2995
FM/AM RF, MIX, OSC, IF
High Frequency Amplifier Applications
Unit: mm
• High stability oscillation voltage on FM local oscillator.
• Recommend FM/AM RF, MIX, OSC and IF.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
40
V
Collector-emitter voltage
V CEO
30
V
Emitter-base voltage
V EBO
4
V
Collector current
I C
50
mA
Base current
I B
10
mA
Collector power dissipation
P C
200
mW
Junction temperature
T j
125
°C
JEDEC ―
Storage temperature range
T stg
− 55~125
°C
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 40 V, I E = 0
0.1 µ A
Emitter cut-off current
I EBO
V EB = 4 V, I C = 0
0.5 µ A
DC current gain
h FE
(Note)
V CE = 6 V, I C = 1 mA
40
240
Reverse transfer capacitance
C re
V CE = 6 V, f = 1 MHz
0.9
1.3
pF
Transition frequency
f T
V CE = 6 V, I E = − 1 mA
150
350
MHz
Collector-base time constant
C c ･ r bb’
V CB = 6 V, I E = − 1 mA, f = 30 MHz
15
30
ps
Noise figure
NF
V CC = 6 V, I E = − 1 mA, f = 100 MHz
(Figure 1)
4.0
dB
Power gain
G pe
15
dB
Oscillation output voltage
V OSC
CC = 6 V, f = 100 MHz (Figure 2)
150
mV
Note: h FE classification R: 40~80, O: 70~140, Y: 120~240
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2SC2995
L 1 : 0.8 mm φ silver plated copper wire, 4 T, 10ID, 8 length
Figure 1 NF, G pe Test Circuit
L 1 : 0.8 mm φ silver plated copper wire, 4 T, 10ID, 8 length
Figure 2 V OSC Test Circuit
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