2SC2668.pdf

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2SC2668
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2668
High Frequency Amplifier Applications
FM, RF, IF Amplifier Applications
Unit: mm
• Small reverse transfer capacitance: C re = 0.70 pF (typ.)
• Low noise figure: NF = 2.5dB (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V CBO
40
V
Collector-emitter voltage
V CEO
30
V
Emitter-base voltage
V EBO
4
V
Collector current
I C
20
mA
Emitter current
I B
4
mA
Collector power dissipation
P C
100
mW
Junction temperature range
T j
125
°C
JEDEC ―
Storage temperature range
T stg
− 55~125
°C
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I CBO
V CB = 40 V, I E = 0
0.5 µ A
Emitter cut-off current
I EBO
V EB = 4 V, I C = 0
0.5 µ A
DC current gain
h FE
(Note)
V CE = 6 V, I C = 1 mA
40
200
Reverse transfer capacitance
C re
V CE = 6 V, f = 1 MHz
0.70
pF
Transition frequency
f T
V CE = 6 V, I C = 1 mA
550
MHz
Collector-base time constant
C c ･ r bb’
V CE = 6 V, I E = − 1 mA, f = 30 MHz
30
ps
Noise figure
NF
V CC = 6 V, I E = − 1 mA, f = 100 MHz,
(Figure 1)
2.5
5.0
dB
Power gain
G pe
18
dB
Note: h FE classification R: 40~80 O: 70~140 Y: 100~200
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2SC2668
L 1 : 0.8 mm φ silver plated copper wire, 4 turns. 10 mm ID, 8 mm length.
Figure 1 NF, G pe Test Circuit
Y Parameter (typ.)
(1) Common emitter (V CE = 6 V, I E = −1 mA, f = 100 MHz)
Characteristics
Symbol
Typ.
Unit
Input conductance
g ie
2.9
ms
Input capacitance
C ie
10.2
pF
Reverse transfer admittance
Y re
0.33
ms
Phase angle of reverse transfer
admittance
θ re
− 90
°
Forward transfer admittance
Y fe
40
ms
Phase angle of forward transfer
admittance
θ fe
− 20
°
Output conductance
g oe
45 µ s
Output capacitance
C oe
1.1
pF
(2) Common base (V CB = 6 V, I E = −1 mA, f = 100 MHz)
Characteristics
Symbol
Typ.
Unit
Input conductance
g ib
34
ms
Input capacitance
C ib
− 10
pF
Reverse transfer admittance
Y rb
0.27
ms
Phase angle of reverse transfer
admittance
θ rb
− 105
°
Forward transfer admittance
Y fb
34
ms
Phase angle of forward transfer
admittance
θ fb
165
°
Output conductance
g ob
45 µ s
Output capacitance
C ob
1.1
pF
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