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TPC8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)
TPC8102
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
Unit: mm
Low drain−source ON resistance : R
DS
(ON)
= 34 mΩ (typ.)
High forward transfer admittance : |Y
fs
| = 9 S (typ.)
Low leakage current : I
DSS
= −10 µA (max) (V
DS
= −30 V)
Enhancement−mode : V
th
= −0.8~ −2.0 V (V
DS
= −10 V, ID = −1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
−30
V
Drain-gate voltage (R
GS
= 20 kΩ)
V
DGR
−30
V
Gate-source voltage
V
GSS
±20
V
JEDEC ―
DC
(Note 1)
I
D
−6
Drain current
A
Pulse (Note1)
I
DP
−24
JEITA
―
Drain power dissipation
(t = 10 s)
P
D
2.4
W
(Note 2a)
TOSHIBA
2-6J1B
Drain power dissipation
(t = 10 s)
P
D
1.0
W
Weight: 0.080 g (typ.)
(Note 2b)
Single pulse avalanche energy
E
AS
47
mJ
(Note 3)
Avalanche current
I
AR
−6
A
Circuit Configuration
Repetitive avalanche energy
E
AR
0.24
mJ
(Note 2a) (Note 4)
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2003-02-20
Small footprint due to small and thin package
TPC8102
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
R
th (ch-a)
52.1
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
R
th (ch-a)
125
°C/W
Marking
(Note 5)
TPC8102
Type
※
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(Unit: mm)
(a)
(b)
Note 3: V
DD
= −24 V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25 Ω, I
AR
= −6 A
Note 4: Reptitve rating; pulse width limited by maximum channel temperature.
Note 5:
●
on lower left of the marking indicates Pin 1.
※
Weekly code:(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
2
2003-02-20
TPC8102
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V
,
V
DS
= 0 V
—
—
±10
µA
Drain cut−off current
I
DSS
V
DS
= −30 V
,
V
GS
= 0 V
—
—
−10
µA
Drain −source breakdown
voltage
V
(BR) DSS
I
D
= −10 mA
,
V
GS
= 0 V
−30
—
—
V
Gate threshold voltage
V
th
V
DS
= −10 V,
I
D
= −1 mA
−0.8
—
−2.0
V
R
DS (ON)
V
GS
= −4 V,
I
D
= −3 A
—
56
70
mΩ
Drain−source ON resistance
R
DS (ON)
V
GS
= −10 V,
I
D
= −3 A
—
34
40
mΩ
Forward transfer admittance
|Y
fs
|
V
DS
= −10 V,
I
D
= −3 A
4.5
9
—
S
Input capacitance
C
iss
—
1380
—
Reverse transfer capacitance
C
rss
V
DS
= −10 V, V
GS
= 0 V, f = 1 MHz
—
220
—
pF
Output capacitan
ce
C
oss
—
560
—
Rise time
t
r
—
12
—
Turn−on time
t
on
—
20
—
Switching time
ns
Fall time
t
f
—
22
—
Turn−off time
t
off
—
90
—
Total gate charge (Gate−source
plus gate−drain)
Q
g
—
43
—
Gate−source charge
Q
gs
V
DD
≈ −24 V, V
GS
= −10 V, I
D
= −6 A
—
30
—
nC
Gate−drain (“miller”) charge
Q
gd
—
13
—
Source−Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
—
—
— −24
A
Forward voltage (diode)
V
DSF
I
DR
= −6 A, V
GS
= 0 V
—
—
1.2
V
3
2003-02-20
TPC8102
4
2003-02-20
TPC8102
5
2003-02-20
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