2174.pdf
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RF2174
3V DCS POWER AMPLIFIER
0
Typical Applications
• 3V DCS1800 (PCN) Cellular Handsets
• 3V DCS1900 (PCS) Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• GPRS Compatible
Product Description
The RF2174 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in DCS1800/1900 hand-held digital
cellular equipment and other applications in the
1700MHz to 2000MHz band. On-board power control
provides over 65dB of control range with an analog volt-
age input, and provides power down with a logic “low” for
standby operation. The device is self-contained with 50
Ω
input and the output can be easily matched to obtain opti-
mum power and efficiency characteristics. The RF2174
can be used together with the RF2173 for dual-band
operation. The device is packaged in an ultra-small plas-
tic package, minimizing the required board space.
0.10 C
B
-B-
2 PLCS
4.00
0.10 C
B
2 PLCS
3.75
2.00
0.80
TYP
A
2
1.60
2 PLCS
1.50
SQ.
3.75
4.00
0.75
0.50
0.10 C A
2 PLCS
0.10 C
A
2.00
INDEX AREA
0.45
0.28
2 PLCS
3.20
2 PLCS
Dimensions in mm.
Shaded pin is lead 1.
0.10
M
C AB
12°
MAX
1.00
0.90
C
0.05
0.05
0.00
0.75
0.65
Optimum Technology Matching® Applied
Si BJT
Package Style: QFN, 16-Pin, 4x4
9
GaAs HBT
GaAs MESFET
Features
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
• Single 2.7V to 4.8V Supply Voltage
• +33dBm Output Power at 3.5V
• 27dB Gain with Analog Gain Control
• 51% Efficiency
• 1700MHz to 1950MHz Operation
• Supports DCS1800 and PCS1900
1
16
15
14
13
AT_EN
2
12
RF OUT
RF IN
3
11
RF OUT
GND1
4
10
RF OUT
Ordering Information
5
6
7
8
9
RF2174
3V DCS Power Amplifier
RF2174 PCBA
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A7 030529
2-275
RF2174
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
V
DC
Caution!
ESD sensitive device.
Power Control Voltage (V
APC
)
-0.5 to +3.0
V
Enable Voltage (V
AT_EN
)
-0.5 to +3.0
V
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
DC Supply Current
1500
mA
Input RF Power
+13
dBm
Duty Cycle at Max Power
50
%
Output Load VSWR
10:1
Operating Case Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Te m p = 2 5 °C, V
CC
=3.2V, V
APC
=2.7V,
P
IN
=+6dBm, Freq=1710MHz to 1910MHz,
25% Duty Cycle, pulse width=1154
μ
s
Overall
Operating Frequency Range
1710 to 1785
MHz
See application schematic for tuning details.
1850 to 1910
MHz
A different tuning is required.
Usable Frequency Range
1700 to 2000
MHz
Maximum Output Power
+32
+33
dBm
Temp=25 °C, V
CC
=3.5V, V
APC
=2.7V
+31.5
+32.8
dBm
Temp=+25 °C, V
CC
=3.2V, V
APC
=2.7V
+31.5
dBm
Temp=+85 °C, V
CC
=3.2V, V
APC
=2.7V
+31
dBm
Temp=25 °C, V
CC
=2.7V, V
APC
=2.7V
+29.5
+30
dBm
Temp=+85 °C, V
CC
=2.7V, V
APC
=2.7V
Total Efficiency
45
51
%
At P
OUT,MAX
, V
CC
=3.2V, Freq=1710MHz to
1785MHz
42
51
%
At P
OUT,MAX
, V
CC
=3.2V, Freq=1850MHz to
1910MHz
15
%
P
OUT
=+20dBm
10
%
P
OUT
=+10dBm
Recommended Input Power
Range
+5
+7
+9
dBm
Output Noise Power
-79
dBm
RBW=100kHz, 1805MHz to 1880MHz and
1930MHz to 1990MHz,
P
OUT,MIN
<P
OUT
<P
OUT,MAX
,
P
IN,MIN
<P
IN
<P
IN,MAX
, V
CC
=3.0V to 5.0V
Forward Isolation
-37
-30
dBm
V
APC
=0.2V, P
IN
=+9dBm, V
AT _ E N
=2.7V,
Freq=1710MHz to 1785MHz
-37
-30
dBm
V
APC
=0.2V, P
IN
=+9dBm, V
AT _ E N
=0V,
Freq=1850MHz to 1910MHz
-40
-35
dBm
V
APC
=0.2V, P
IN
=+6dBm
Second Harmonic
-60
-45
dBc
P
OUT
<
+31.5dBm
Third Harmonic
-65
-50
dBc
All Other Non-Harmonic Spuri-
ous
-36
dBm
Input Impedance
50
Ω
Input VSWR
2.2:1
P
OUT,MAX
-5dB<P
OUT
<P
OUT,MAX
3:1
P
OUT
<P
OUT,MAX
-5dB
Output Load VSWR
10:1
Spurious<-36dBm, V
APC
=0.2V to 2.7V,
RBW=100kHz
Output Load Impedance
4.5-j3.9
Ω
Load Impedance presented at RF OUT pin
2-276
Rev A7 030529
RF2174
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Power Control
Power Control “ON”
2.6
V
Maximum P
OUT
, Voltage supplied to the
input
Power Control “OFF”
0.2
0.5
V
Minimum P
OUT
, Voltage supplied to the input
Attenuator Enable “ON”
2.5
2.6
2.85
V
For maximum isolation when V
APC
is low
Attenuator Enable “OFF”
0.2
0.5
V
For power down mode
Power Control Range
61.5
68
dB
V
APC
=0.2V to 2.7V, V
AT_EN
=2.6V,
P
IN
=+9dBm
Gain Control Slope
100
dB/V
P
OUT
=-10dBm to +33dBm
APC Input Capacitance
10
pF
DC to 2MHz
APC Input Current
4.5
5
mA
V
APC1,2
=2.6V
10
μ
A
V
APC1,2
=0V
AT_EN Input Current
500
μ
A
V
AT_EN
=2.6V, V
APC
=0V
10
μ
A
V
AT_EN
=0V, V
APC
=0V
Turn On/Off Time
100
ns
Power Supply
Power Supply Voltage
3.5
V
Specifications
2.7
4.8
V
Nominal operating limits, P
OUT
<+33dBm
5.5
V
With maximum output load VSWR 6:1,
P
OUT
<+33dBm
Power Supply Current
1.3
A
DC Current at P
OUT,MAX
50
300
mA
Idle Current, P
IN
<-30dBm
1
10
μ
A
P
IN
<-30dBm, V
APC
=0.2V
1
10
μ
A
P
IN
<-30dBm, V
APC
=0.2V, Temp=+85°C
Rev A7 030529
2-277
RF2174
Pin
Function
Description
Interface Schematic
1
GND
Internally connected to the ground slug.
See pin 15.
2
AT_EN
Control input for the PIN diode. The purpose of the PIN diode is to
attenuate the RF input drive level when the V
APC
is low. This serves
both to reduce the leakage through the device cause by self biasing
when driving with high level at the RF input, as well as to maintain a
good input match when the bias of the input stage is turned off. When
this pin is “high” the PIN diode control is turned on. See the Theory of
Operation for more details.
To PIN
diode
3k
Ω
AT_EN
GND1
3
RF IN
RF Input. This is a 50
Ω
input, but the actual impedance depends on the
interstage matching network connected to pin 5. An external DC block-
ing capacitor is required if this port is connected to a DC path to ground
or a DC voltage.
VCC1
RF IN
PIN
GND 1
From Attn
control circuit
From Bias
Stages
4
GND1
Ground connection for the pre-amplifier stage. Keep traces physically
short and connect immediately to the ground plane for best perfor-
mance. It is important for stability that this pin has it’s own vias to the
groundplane, to minimize any common inductance.
See pin 3.
5
VCC1
Power supply for the pre-amplifier stage and interstage matching. This
pin forms the shunt inductance needed for proper tuning of the inter-
stage match. Please refer to the application schematic for proper con-
figuration, and note that position and value of the components are
important.
See pin 3.
6
APC1
Power Control for the driver stage and pre-amplifier. When this pin is
"low," all circuits are shut off. A "low" is typically 0.5V or less at room
temperature. A shunt bypass capacitor is required. During normal oper-
ation this pin is the power control. Control range varies from about 1.0V
for -10dBm to 2.6V for +33dBm RF output power. The maximum power
that can be achieved depends on the actual output matching; see the
application information for more details. The maximum current into this
pin is 5mA when V
APC1
=2.6V, and 0mA when V
APC
=0V.
APC
VCC
To RF
Stages
GND
GND
7
APC2
Power Control for the output stage. See pin 6 for more details.
See pin 6.
8
VCC
Power supply for the bias circuits.
See pin 6.
9
GND
Internally connected to the ground slug.
10
RF OUT
RF Output and power supply for the output stage. Bias voltage for the
final stage is provided through this wide output pin. An external match-
ing network is required to provide the optimum load impedance.
RF OUT
From Bias
Stages
GND
PCKG BAS
11
RF OUT
Same as pin 10.
Same as pin 10.
12
RF OUT
Same as pin 10.
Same as pin 10.
13
2F0
Connection for the second harmonic trap. This pin is internally con-
nected to the RF OUT pins. The bonding wire together with an external
capacitor form a series resonator that should be tuned to the second
harmonic frequency in order to increase efficiency and reduce spurious
outputs.
Same as pin 10.
14
VCC2
Same as pin 15.
2-278
Rev A7 030529
RF2174
Pin
Function
Description
Interface Schematic
15
VCC2
Power supply for the driver stage and interstage matching. This pin
forms the shunt inductance needed for proper tuning of the interstage
match. Please refer to the application schematic for proper configura-
tion, and note that position and value of the components are important.
VCC2
From Bias
Stages
GND2
16
VCC2
Same as pin 15.
Same as pin 15.
Pkg
Base
GND
Ground connection for the output stage. This pad should be connected
to the groundplane by vias directly under the device. A short path is
required to obtain optimum performance, as well as to provide a good
thermal path to the PCB for maximum heat dissipation.
Rev A7 030529
2-279
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