Basic ESD And IO Design.pdf

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BASIC ESD AND
I/O DESIGN
SANJAY DABRAL
TIMDTHY MALONEY
Intel Corporation
Santa Clara, California
A Wiley Interscience Publication
JOHN WILEY & SONS, INC.
New York ! Chichester { Weinheim I Brisbane I Singapore I Toronto
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This book is printed on acid-free paper. §
Copyright 1998byJohnWiley&Sons,lnc.Allrightsreserved
Published simultaneously in Canada
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Library Cif Congress Calaloging-in-Publiculion Dala
Dabral, Sanjay
Basic ESD and I/O design / Sanjay Dabral and Timothy Maloney.
p. CIIl.
"A Wiley-Intersciencepublication."
Includes bibliographical references and index.
ISBN 0-471-25359-6 (alk. paper)
I. Integrated circuits-Very largescale integration-protection.
2. Electroniccireuit design. 3_ Electric discharges. 4. Static
eliminators. I. Maloney, Timothy J
TK7874.75.D33 1998
621.39'5----dc21
97-32241
Printed in the United States of America.
1098765432
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CONTENTS
1. INTRODUCTION
1.1. Historical Perspective / I
1.2. Nature of ESD and Approximating Models I 2
1.2.1. ESD Relevant to Semiconductor Chips I 2
1.2.2. ESD-Related Failures I 3
1.3. ESD Issues in the Future I 4
1.3.1. I/O Pin Trends and Sensitivity of Increased
Technology I 5
1.3.2. Increased Number of Technologies! 7
1.3.3. Other Complications / 9
1.4. Solutions I 10
1.5. Outline of the Book / 12
1.6. Summary I 14
References ! 14
2. ESD PROTECTION METHODOLOGY
2.1. Additional Issues Due to ESn I 17
2.2. Devices for ESD Protection I 21
2.2.1. Thick-Field-Oxide (TFO) Clamps / 21
2.2.2. Grounded-Gate NMOS (GGNMOS) / 22
2.2.3. Silicon-Controlled Rectifier (SCR) / 23
17
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vi
2.2.4. Medium-Voltage Triggered SCR (MVTSCR) ! 25
2.2.5. Low-Voltage Triggered SCR (LVTSCR) / 25
2.2.6. Bimodal SCR ! 27
2.2.7. Gate-Coupled NMOS (GCNMOS) I 31
2.2.8. Punchthrough-Induced Protection Element (PIPE) j 32
2.2.9. Spark Gap / 35
2.2.10. Zener Clamps / 36
2.2.11. Double-Implant Field Inversion Device in Well
(DIFIDW) I 37
2.3. Electrothermal Simulation ! 38
2.4. Non-Breakdown Devices / 38
2.4.1. Diodes! 38
2.4.1.1. Cascaded Diodes! 40
2.4.2. MOSFETs / 43
2.5. Current Path Construction I 45
2.5.1. I/O Pad Segment / 47
2.5.1.1. Dual-Diode Based j 47
2.5.1.2. BieMOS BJT Based j 54
2.5.1.3. MOS Based! 56
2.6. Power Supply Coupling Segment I 57
2.6.1. Diode Based / 57
2.6.2. MOS Based! 61
2.7 vcc-to-V ss Core Clamps j 61
2.7.1. MOS Based j 61
2.7.2. Diode Clamps j 62
2.7.3. Cantilevered Diode j 68
2.8. CDM Guidelines j 71
2.9. Summary j 79
References j 80
3. ADDITIONAL ESD CONSIDERATIONS
3.1. Capacitor Benefits in Stress Reduction j 84
3.2. Packaging Effects on ESD I 86
3.2.1. Conventional Packaging I 86
3.2.2. Multichip Modules j 90
3.3. Small-Chip ESD Issues I 93
3.4. Benefits of Distributed Clamps I 95
3.5. Predriver Designs j 96
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vii
3.6. Antenna Diode Issues / 99
3.7. Hot-Electron Interactions / 103
3.8. Latchup Issues / 105
3.9. Silicon-on-Insulator ESD Protection / 107
3.10. Summary / 109
References / 110
4. CIRCUITS
4.1. Transmission Line Phenomena / 113
4.2. Series and Parallel Termination / 119
4.3. CMOS I/O / 121
4.4. Gunning Transceiver Logic (GTL) I/O / 126
4.5. Bus Timing Considerations / 130
4.5.1. Common Clock Transfers / 130
4.5.2. Cotransmitted Clock (CTC) / 135
4.5.3. Pulse Width Modulation Scheme / 139
4.6. Topology Effects / 140
4.7. Bidirectional Signaling / 148
4.8. Compensation Schemes / 151
4.9. Analog Compensation / 153
4.10. Digital Compensation / 158
4.11. Frequency-Based Compensation / 161
4.12. Simultaneous Switching Output Noise / 162
4.12.1. Design for SSO Reduction / 168
4.12.1.1. Predriver Skewing / 168
4.12.1.2. NP-Inverted Stack Driver / 169
4.12./.3. Differential Signaling / 172
4.12.1.4. SSO Reduction Using Packaging
Options / 172
4.12.1.5. SSO Reduction Using Low-Weight
Coding / 173
4.13. System Modeling / 174
4.14. I/O Information on the Internet / 178
4.15. Summary j 179
References / 180
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