bcp68.pdf

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199614006 UNPDF
BCP68
NPN Silicon AF Transistor
For general AF applications
4
High collector current
High current gain
Low collector-emitter saturation voltage
3
Complementary type: BCP69 (PNP)
2
1
VPS05163
Type
Marking
Pin Configuration
Package
BCP68
BCP68-10
BCP68-16
BCP68-25
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V CEO
20
V
Collector-emitter voltage
V CES
V CBO
25
V
Collector-base voltage
25
V
Emitter-base voltage
V EBO
5
DC collector current
Peak collector current
I C
1
A
I CM
2
Base current
I B
100
mA
Peak base current
I BM
200
Total power dissipation, T S = 124 °C
Junction temperature
P tot
1.5
W
T j
150
°C
Storage temperature
T stg
-65 .. 150
Thermal Resistance
Junction - soldering point 1)
R thJS
17
K/W
1 For calculation of R thJA please refer to Application Note Thermal Resistance
1
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BCP68
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
I C = 30 mA, I B = 0
V (BR)CEO
20
-
-
V
Collector-emitter breakdown voltage
I C = 10 µA, V BE = 0
V (BR)CES
25
-
-
Collector-base breakdown voltage
I C = 10 µA, I E = 0
V (BR)CBO
25
-
-
Emitter-base breakdown voltage
I E = 10 µA, I C = 0
V (BR)EBO
5
-
-
Collector cutoff current
V CB = 25 V, I E = 0
I CBO
-
-
100 nA
Collector cutoff current
V CB = 25 V, I E = 0 , T A = 150 °C
I CBO
-
-
100 µA
DC current gain 1)
I C = 5 mA, V CE = 10 V
h FE
50
-
-
-
DC current gain 1)
I C = 500 mA, V CE = 1 V
h FE
85
85
100
160
375
160
250
375
BCP68
BCP68-10
BCP68-16
BCP68-25
-
100
160
250
DC current gain 1)
I C = 1 A, V CE = 1 V
h FE
60
-
-
Collector-emitter saturation voltage1)
I C = 1 A, I B = 100 mA
V CEsat
-
-
0.5 V
Base-emitter voltage 1)
I C = 5 mA, V CE = 10 V
I C = 1 A, V CE = 1
V BE(ON)
0.6
-
-
-
-
1
AC Characteristics
Transition frequency
I C = 100 mA, V CE = 5 V, f = 100 MHz
f T
-
100
-
MHz
1) Pulse test: t
300
s, D = 2%
2
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≤ =
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BCP68
Total power dissipation P tot = f ( T S )
Transition frequency f T = f ( I C )
V CE = 5V
1.8
10
3
BCP 68
EHP00275
f
MHz
W
T
5
1.2
0.9
10 2
0.6
5
0.3
10
1
0
0 15 30 45 60 75 90 105 120 °C 150
T S
10
0
5
10 1
5
10 2
mA
10
3
C
Collector cutoff current I CBO = f ( T A )
V CB = 25V
DC current gain h FE = f ( I C )
V CE = 1V
10
5
BCP 68
EHP00276
10
3
BCP 68
EHP00277
nA
h
5
CBO
FE
10
4
100
˚C
10
2
25
˚C
max
-50
˚C
10 3
5
10
2
typ
10 1
5
10
1
10
0
10
0
0
50
100
˚C
150
10
0
10 1
10 2
10
3
mA
10
4
T
A
C
3
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BCP68
Collector-emitter saturation voltage
I C = f ( V CEsat ), h FE = 10
Base-emitter saturation voltage
I C = f ( V BEsat ), h FE = 10
10 4
BCP 68
EHP00278
10 4
BCP 68
EHP00279
mA
mA
C
C
10
3
10 3
100
25
-50
˚C
5
5
˚C
˚C
10
2
100
25 ˚C
˚C
˚C
10
2
-50
5
5
10 1
10 1
5
5
10 0
10 0
0
0.2
0.4
0.6
V 0.8
0
0.2
0.4
0.6
0.8
V
1.2
V
CEsat
V
BE
sat
Permissible pulse load
P totmax / P totDC = f ( t p )
10
3
BCP 68
EHP00280
P
tot max
tot
t p
P DC
t p
D
=
T
T
10
2
5
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
5
10
-1
10
-6
10
-5
10 -4
10 -3
10 -2
s
10
1
t
p
4
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0.0
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