bfr181.pdf

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199617026 UNPDF
BFR181
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
3
f T = 8 GHz
F = 1.45 dB at 900 MHz
2
1
VPS05161
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFR181
RFs
1 = B
2 = E
3 = C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V CEO
12
V
Collector-emitter voltage
V CES
20
Collector-base voltage
V CBO
20
Emitter-base voltage
V EBO
2
Collector current
I C
20
mA
Base current
I B
2
Total power dissipation
T S
P tot
175
mW
91 °C 1)
Junction temperature
T j
150
°C
Ambient temperature
T A
-65 ... 150
Storage temperature
T stg
-65 ... 150
Thermal Resistance
Junction - soldering point 2)
R thJS
335
K/W
1 T S is measured on the collector lead at the soldering point to the pcb
2 For calculation of R thJA please refer to Application Note Thermal Resistance
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199617026.015.png 199617026.016.png 199617026.017.png 199617026.018.png 199617026.001.png
BFR181
Electrical Characteristics at T A = 25°C, unless o therwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
I C = 1 mA, I B = 0
V (BR)CEO
12
-
-
V
Collector-emitter cutoff current
V CE = 20 V, V BE = 0
I CES
-
-
100 µA
Collector-base cutoff current
V CB = 10 V, I E = 0
I CBO
-
-
100 nA
Emitter-base cutoff current
V EB = 1 V, I C = 0
I EBO
-
-
1
µA
DC current gain
I C = 5 mA, V CE = 8 V
h FE
50
100
200 -
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199617026.002.png 199617026.003.png 199617026.004.png
BFR181
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I C = 10 mA, V CE = 8 V, f = 500 MHz
f T
6
8
-
GHz
Collector-base capacitance
V CB = 10 V, f = 1 MHz
C cb
-
0.26 0.45 pF
Collector-emitter capacitance
V CE = 10 V, f = 1 MHz
C ce
-
0.18
-
Emitter-base capacitance
V EB = 0.5 V, f = 1 MHz
C eb
-
0.3
-
Noise figure
I C = 2 mA, V CE = 8 V, Z S = Z Sopt ,
f = 900 MHz
f = 1.8 GHz
F
dB
-
-
1.45
1.8
-
-
Power gain, maximum stable 1)
I C = 5 mA, V CE = 8 V, Z S = Z Sopt , Z L = Z Lopt ,
f = 900 MHz
G ms
-
18
-
Power gain, maximum available 2)
I C = 5 mA, V CE = 8 V, Z S = Z Sopt , Z L = Z Lopt ,
f = 1.8 GHz
G ma
-
11.5
-
Transducer gain
I C = 5 mA, V CE = 8 V, Z S = Z L = 50
| S 21e | 2
,
14
9
f = 900 MHz
f = 1.8 GHz
-
-
-
-
1 G ms = | S 21 / S 12 |
2 G ma = | S 21 / S 12 | (k-(k 2 -1) 1/2 )
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199617026.005.png
BFR181
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.0010519 fA
BF =
96.461
-
NF =
0.90617
-
VAF =
22.403
V
IKF =
0.12146
A
ISE =
12.603
fA
NE =
1.7631
-
BR =
16.504
-
NR =
0.87757
-
VAR =
5.1127
V
IKR =
0.24951
A
ISC =
0.01195
fA
NC =
1.6528
-
RB =
9.9037
IRB =
0.69278
mA
RBM = 6.6315
RE =
2.1372
MJE = 0.43619 -
VTF = 0.12571 V
CJC = 319.69 fF
XCJC = 0.082903 -
VJS =
2.2171
CJE =
1.8168
fF
VJE =
0.73155
V
TF =
17.028
ps
XTF =
0.33814
-
ITF =
1.0549
mA
PTF = 0
deg
VJC =
1.1633
V
MJC =
0.30013
-
TR =
2.7449
ns
CJS = 0
fF
0.75
V
MJS = 0
-
XTB = 0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.99768
-
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L BI =
0.85
nH
L BO =
0.51
nH
L EI =
0.69
nH
L EO =
0.61
nH
L CI =
0
nH
L CO =
0.49
nH
C BE =
73
fF
C CB =
84
fF
C CE =
165
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
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RC =
199617026.006.png 199617026.007.png 199617026.008.png 199617026.009.png 199617026.010.png 199617026.011.png 199617026.012.png
BFR181
Total power dissipation P tot = f ( T S )
200
mW
160
140
T S
120
100
80
60
40
20
0
0
20
40
60
80
100 120 °C 150
T S
Permissible Pulse Load R thJS = f ( t p )
Permissible Pulse Load
P totmax / P totDC = f ( t p )
10
3
10
2
K/W
-
10
2
10
1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10
1
10
0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
s
t p
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
s
t p
10 0
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