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BTS 441 T
Smart Highside Power Switch
One Channel: 20m
Ω
Product Summary Package
On-state Resistance
R
ON
20m
Ω
TO-220-5-11 TO-263-5-2 TO-220-5-12
Operating Voltage
V
bb(on)
4.75 ... 41V
Nominal load current
I
L(ISO)
21A
Current limitation
I
L(lim)
65A
Standard SMD Straight
General Description
•
N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS technology.
•
Fully protected by embedded protection functions.
Application
•
µ
C compatible power switch for 5V, 12 V and 24 V DC applications
•
All types of resistive, inductive and capacitve loads
•
Most suitable for loads with high inrush currents, so as lamps
•
Replaces electromechanical relays, fuses and discrete circuits
Basic Funktions
•
Very low standby current
•
Optimized static
e
lectro
m
agnetic
c
ompatibility (
EMC
)
•
µC and CMOS compatible
•
Fast demagnetization of inductive loads
•
Stable behaviour at undervoltage
Protection Functions
•
Short circuit protection
Vbb
•
Current limitation
•
Overload protection
•
Thermal shutdown
•
Overvoltage protection (including load dump) with external
GND-resistor
Logic
with
protection
functions
•
Reverse battery protection with external GND-resistor
IN
•
Loss of ground and loss of
V
bb
protection
•
E
lectro
s
tatic
d
ischarge (
ESD
) protection
OUT
PROFET
Load
GND
Infineon Technologies AG
Page 1 of 12
2001-June-27
BTS 441 T
Functional diagram
overvoltage
protection
gate
control
+
charge
pump
current limit
VBB
internal
voltage supply
logic
clamp for
inductive load
OUT
temperature
sensor
ESD
IN
LOAD
GND
PROFET
Pin Definitions and Functions
Pin configuration
(top view)
Pin
Symbol
Function
1
GND
Logic ground
Tab = V
BB
2
IN
Input
, activates the power switch in
case of logical high signal
3
V
bb
Positive power supply voltage
The tab is shorted to pin 3
4
N.C.
Not connected
1 2 (3) 4 5
GND IN NC OUT
5
UT
Output
to the load
Tab
V
bb
Positive power supply voltage
The tab is shorted to pin 3
Infineon Technologies AG
Page 2 of 12
2001-June-27
BTS 441 T
Maximum Ratings
at T
j
= 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 5)
V
bb
43
V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
V
bb
34
V
Load dump protection
1)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
2)
= 2
V
Load dump
3)
60
V
Ω
,
R
L
= 0,5
Ω
,
t
d
= 200 ms, IN= low or high
Load current (Short-circuit current, see page 5)
I
L
self-limited
A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC) ; TC
≤
25°C
P
tot
125
W
Maximal switchable inductance, single pulse
V
bb
=
12V,
T
j,start
=
150°C,
T
C
=
150°C const.
(see diagram, p.8)
I
L(ISO)
=
21
A, RL= 0
Ω
:
E
4
)
AS
=0.7J: Z
L
2.1 mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5k
V
ESD
1.0
8.0
kV
Ω
; C=100pF
Input voltage (DC)
V
IN
-10 ... +16
V
Current through input pin (DC)
see internal circuit diagrams page 7
I
IN
±
2.0 mA
Thermal resistance
chip - case:
junction - ambient (free air):
R
thJC
R
thJA
≤
1
K/W
≤
75
SMD version, device on pcb
5)
:
≤
33
1)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a 150
Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4)
E
AS
is the maximum inductive switch off energy
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
µ
m thick) copper area for V
bb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3
2001-June-27
BTS 441 T
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
min
typ max
Load Switching Capabilities and Characteristics
On-state resistance
(V
bb
(pin3) to OUT (pin5)
);
I
L
= 2 A V
bb
≥
7V
:
T
j
=25 °C:
T
j
=150 °C:
R
ON
--
15
28
20
37
m
Ω
see diagram page 9
Nominal load current
(pin 3 to 5)
‘ISO 10483-1, 6.7:
V
ON
=0.5V,
T
C
=85°C
I
L(ISO)
17
21
--
A
Output current
(pin 5)
while GND disconnected or
GND pulled up
6)
, V
bb
=30 V, V
IN
= 0,
see diagram page 7 (not tested specifi
ed by
design)
I
L(GNDhigh)
--
--
2 mA
Turn-on time
IN
to 90%
V
OUT
:
t
on
t
off
40
40
90
110
250
µ
s
Turn-off time
IN
to 10%
V
OUT
:
R
L
= 12
Ω
,
Slew rate on
10 to 30%
V
OUT
,
R
L
= 12
d
V
/dt
on
0.1
--
1 V/
µ
s
Ω
,
Slew rate off
70 to 40%
V
OUT
,
R
L
= 12
-d
V
/dt
off
0.1
--
1 V/
µ
s
Ω
,
6)
not tested specified by design
Infineon Technologies AG
Page 4
2001-June-27
200
BTS 441 T
Parameter and Conditions
Symbol
Values
Unit
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
min
typ max
Operating Parameters
Operating voltage
T
j
=-40°C
T
j
=+25°C
T
j
=+105°C
6)
T
j
=+150°C
V
bb(on)
4.75
4.75
4.75
5.0
--
--
--
--
41
43
43
43
V
Overvoltage protection
7)
T
j
=-40°C:
V
bb(AZ)
41
43
--
47
--
52
V
I
bb
=
40 mA
T
j
=+25...+150°C:
Standby current (pin 3)
8)
T
j
=-40...+25°C
:
T
j
=+105°C
6)
:
I
bb(off)
--
--
--
5
--
--
10
10
25
µ
A
V
IN
=0
see diagram page 9
T
j
=+150°C:
Off-State output current (included in
I
bb(off)
)
V
IN
=0
I
L(off)
--
1.5
10
µ
A
Operating current (Pin 1)
9)
,
V
IN
=5 V,
I
GND
--
2
4 mA
Protection Functions
Current limit (pin 3 to 5)
I
L(lim)
(see timing diagrams, page 9)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
--
--
40
--
65
--
85
--
--
A
Repetitive short circuit current limit
I
L(SCr)
--
55
--
A
T
j
=
T
jt
(see timing diagrams, page 10)
Thermal shutdown time
10)11)
T
j,start
=25°C:
T
off(SC)
--
14
-- ms
(see timing diagram on page 10)
Output clamp
(inductive load switch off) ;
T
j
=-40°C:
at V
OUT
= V
bb
- V
ON(CL)
,
I
L
= 40 mA
T
j
=25..150°C:
V
ON(CL)
41
43
--
47
--
52
V
Thermal overload trip temperature
T
jt
150
--
--
°C
Thermal hysteresis
∆
T
jt
--
10
--
K
Reverse battery (pin 3 to 1)
12)
-
V
bb
--
--
32
V
Reverse battery voltage drop (V
OUT
> V
bb
)
I
L
= -2A
T
j
=+150°C:
-V
ON(rev)
--
540
-- mV
7)
see also
V
ON(CL)
in table of protection functions and circuit diagram page 7
8)
Measured with load, typ. 40 µA without load.
9)
Add
I
IN
, if
V
IN
>5.5 V
10)
not tested specified by design
11)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
µ
m thick) copper area for V
bb
connection. PCB is vertical without blown air.
12)
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 1 and circuit page 7).
Ω
Infineon Technologies AG
Page 5
2001-June-27
Requires 150
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