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70237
J/SST/U308 Series
Vishay Siliconix
N-Channel JFETs
J308
SST308 U309
J309
SST309 U310
J310
SST310
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
J308
–1 to –6.5
–25
8
12
J309
–1 to –4
–25
10
12
J310
–2 to –6.5
–25
8
24
SST308
–1 to –6.5
–25
8
12
SST309
–1 to –4
–25
10
12
SST310
–2 to –6.5
–25
8
24
U309
–1 to –4
–25
10
12
U310
–2.5 to –6
–25
10
24
Excellent High Frequency Gain:
Gps 11.5 dB @ 450 MHz
Wideband High Gain
High-Frequency Amplifier/Mixer
Very High System Sensitivity
Oscillator
Very Low Noise: 2.7 dB @ 450 MHz
High Quality of Amplification
Sample-and-Hold
Very Low Distortion
High-Speed Switching Capability
Very Low Capacitance Switches
High ac/dc Switch Off-Isolation
High Low-Level Signal Amplification
The J/SST/U308 series offers superb amplification characteristics.
Of special interest is its high-frequency performance. Even at 450
MHz, this series offers high power gain at low noise.
and is available with tape-and-reel options. The U series
hermetically-sealed TO-206AC (TO-52) package supports full
military processing. (See Military and Packaging Information for
further details.)
Low-cost J series TO-226AA (TO-92) packaging supports
automated assembly with tape-and-reel options. The SST series
TO-236 (SOT-23) package provides surface-mount capabilities
For similar dual products packaged in the TO-78, see the
U430/431 data sheet
TO-226AA
(TO-92)
TO-236
(SOT-23)
TO-206AC
(TO-52)
D
1
D
1
S
3
G
1
S
2
S
2
G
3
Top View
SST308 (Z8)*
SST309 (Z9)*
SST310 (Z0)*
2
3
D
G and Case
Top View
J308
J309
J310
Top View
U309
U310
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
www.vishay.com
7-1
J/SST/U308 Series
Vishay Siliconix
Gate-Drain, Gate-Source Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–25 V
Operating Junction Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . .
–55 to 150
C
Gate Current :
(J/SST Prefixes)
. . . . . . . . . . . . . . . . . . . .
10 mA
Power Dissipation :
(J/SST Prefixes)
a
. . . . . . . . . . . . . . . . .
350 mW
. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
(U Prefix)
20 mA
(U Prefix)
b
. . . . . . . . . . . . . . . . . . . . . . .
500 mW
. . . . . . . . . . . . . . . . . . .
300C
Notes
a. Derate 2.8 mW/C above 25C
b. Derate 4 mW/C above 25C
Storage Temperature :
(J/SST Prefixes)
. . . . . . . . . . . . . .
–55 to 150
C
(U Prefix)
. . . . . . . . . . . . . . . . . . . .
–65 to 175C
!
Limits
J/SST308
J/SST309
J/SST310
Parameter
Symbol
Test Conditions
Typ
a
Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
(BR)GSS
I
G
= –1
A , V
DS
= 0 V
–35
–25
–25
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
–1
–6.5
–1
–4
–2
–6.5
V
Saturation Drain Current
b
I
DSS
V
DS
= 10 V, V
GS
= 0 V
12
60
12
30
24
60
mA
V
GS
= –15 V, V
DS
= 0 V
–0.002
–1
–1
–1
nA
Gate Reverse Current
I
GSS
T
A
= 125C
–0.001
–1
–1
–1
A
Gate Operating Current
I
G
V
DG
= 9 V, I
D
= 10 mA
–15
pA
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
35
Gate-Source Forward Voltage
V
GS(F)
I
G
= 10 mA
V
DS
= 0 V
J
0.7
1
1
1
V
Dynamic
Common-Source
Forward Transconductance
g
fs
14
8
10
8
mS
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
Common-Source
Output Conductance
g
os
110
250
250
250
S
Common-Source
Input Capacitance
J
4
5
5
5
C
iss
DS
V
GS
= –10 V
f = 1 MHz
SST
4
pF
J
1.9
2.5
2.5
2.5
Common-Source
Reverse Transfer Capacitance
f = 1 MHz
C
rss
SST
1.9
Equivalent Input
Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
6
nV
⁄
Hz
High Frequency
Common-Gate
Forward Transconductance
g
fg
f = 105 MHz
14
f = 450 MHz
13
mS
f = 105 MHz
0.16
Common-Gate
Output Conductance
g
og
V
DS
= 10 V
I
D
= 10 mA
f = 450 MHz
0.55
Common-Gate Power Gain
c
f = 105 MHz
16
G
pg
f = 450 MHz
11.5
dB
f = 105 MHz
1.5
Noise Figure
NF
f = 450 MHz
2.7
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NZB
b. Pulse test: PW
300 s duty cycle
3%.
c. Gain (G
pg
) measured at optimum input noise match.
www.vishay.com
7-2
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
V
DS
= 10 V, I
D
= 10 mA
Common-Source
V
DS
= 10 V
Common-Source
Common-Gate
Common-Gate
V
DS
= 10 V
J/SST/U308 Series
Vishay Siliconix
!
Limits
U309
U310
Parameter
Symbol
Test Conditions
Typ
a
Min Max Min Max Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1
A , V
DS
= 0 V
–35
–25
–25
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 nA
–1
–4
–2.5
–6
V
Saturation Drain Current
b
I
DSS
V
DS
= 10 V, V
GS
= 0 V
12
30
24
60
mA
V
GS
= –15 V, V
DS
= 0 V
–0.002
–
0.15
–
0.15
nA
Gate Reverse Current
I
GSS
T
A
= 125
C
–0.001
–
0.15
–
0.15
A
Gate Operating Current
I
G
V
DG
= 9 V, I
D
= 10 mA
–15
pA
Drain-Source On-Resistance
r
DS(on)
V
GS
= 0 V, I
D
= 1 mA
35
Gate-Source Forward Voltage
V
GS(F)
I
G
= 10 mA , V
DS
= 0 V
0.7
1
1
V
Dynamic
Common-Source
Forward Transconductance
g
fs
14
10
10
mS
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
Common-Source
Output Conductance
g
os
110
250
250
S
Common-Source
Input Capacitance
C
iss
4
5
5
V
DS
= 10 V, V
GS
= –10 V
f = 1 MHz
pF
Common-Source
Reverse Transfer Capacitance
C
rss
1.9
2.5
2.5
Equivalent Input Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
6
n
V
⁄
High Frequency
Common-Gate
Forward Transconductance
f = 105 MHz
14
g
fg
f = 450 MHz
13
mS
f = 105 MHz
0.16
Common-Gate
Output Conductance
g
og
f = 450 MHz
0.55
V
DS
= 10 V
I
D
= 10 mA
f = 105 MHz
16
14
14
Common-Gate Power Gain
c
G
pg
f = 450 MHz
11.5
10
10
dB
f = 105 MHz
1.5
2
2
Noise Figure
NF
f = 450 MHz
2.7
3.5
3.5
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NZB
b. Pulse test: PW
300 s duty cycle
3%.
c. Gain (G
pg
) measured at optimum input noise match.
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
www.vishay.com
7-3
V
DS
= 10 V, I
D
= 10 mA
V
DS
= 10 V, V
GS
= –10 V
Hz
Common-Gate
Common-Gate
V = 10 V
J/SST/U308 Series
Vishay Siliconix
"
"#!
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
100
50
10 nA
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
I
G
@
I
D
= 10 mA
200 mA
80
40
1 nA
T
A
= 125C
60
30
100 pA
I
GSS
@ 125
C
200 mA
g
fs
40
I
DSS
20
10 pA
10 mA
T
A
= 25C
20
10
1 pA
I
GSS
@ 25C
0
0
0.1 pA
0
–1
–2
–3
–4
–5
0
3
6
9
12
15
V
GS(off)
– Gate-Source Cutoff Voltage (V)
V
DG
– Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
100
300
20
V
GS(off)
= –3 V
V
DS
= 10 V
f = 1 kHz
80
240
16
T
A
= –55
C
60
r
DS
180
12
g
os
40
120
8
25C
125C
20
60
4
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V, f = 1 kHz
0
0
0
0
–1
–2
–3
–4
–5
0.1
1
10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
Output Characteristics
Output Characteristics
15
30
V
GS(off)
= –3 V
V
GS(off)
= –1.5 V
V
GS
= 0 V
V
GS
= 0 V
12
24
–0.2 V
–0.4 V
9
18
–0.8 V
–0.4 V
–1.2 V
6
12
–0.6 V
–1.6 V
3
–0.8 V
6
–2.0 V
–2.4 V
–1.0 V
0
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
www.vishay.com
7-4
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
J/SST/U308 Series
Vishay Siliconix
"
"#!
Output Characteristics
Output Characteristics
20
50
V
GS(off)
= –1.5 V
V
GS(off)
= –3 V
V
GS
= 0 V
V
GS
= 0 V
–0.2 V
16
40
–0.4 V
12
–0.4 V
30
–0.8 V
8
–0.6 V
20
–1.2 V
–1.6 V
–0.8 V
4
10
–2.0 V
–1.0 V
0
0
–2.4 V
0
2
4
6
8
10
0
2
4
6
8
10
V
DS
– Drain-Source Voltage (V)
V
DS
– Drain-Source Voltage (V)
Transfer Characteristics
Transfer Characteristics
30
100
V
GS(off)
= –1.5 V
V
DS
= 10 V
V
GS(off
)
= –3 V
V
DS
= 10 V
24
80
18
T
A
= –55
C
60
T
A
= –55
C
25
C
25
C
12
40
6
125C
20
125C
0
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
–0.6
–1.2
–1.8
–2.4
–3
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
30
50
V
GS(off)
= –1.5 V
V
DS
= 10 V
f = 1 kHz
V
GS(off)
= –3 V
V
DS
= 10 V
f = 1 kHz
24
T
A
= –55C
40
25C
T
A
= –55
C
18
30
125
C
25C
12
20
125
C
6
10
0
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
–0.6
–1.2
–1.8
–2.4
–3
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
Document Number: 70237
S-04028—Rev. G, 04-Jun-01
www.vishay.com
7-5
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