2n5087.pdf

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2N50876/MMBT5086/2N5087/MMBT5087 PNP General Purpose Amplifier
2N5086
2N5087
MMBT5086
MMBT5087
C
E
C B E
TO-92
SOT-23
Mark: 2P / 2Q
B
PNP General Purpose Amplifier
This device is designed for low level, high gain, low noise general
purpose amplifier applications at collector currents to 50 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V CEO
Collector-Emitter Voltage
50
V
V CBO
Collector-Base Voltage
50
V
V EBO
Emitter-Base Voltage
5.0
V
I C
Collector Current - Continuous
100
mA
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5086
2N5087
*MMBT5086
*MMBT5087
P D
Total Device Dissipation
Derate above 25
625
5.0
350
2.8
mW
mW/
C
C
R θ
JC
Thermal Resistance, Junction to Case
83.3
C/W
R θ
JA
Thermal Resistance, Junction to Ambient
200
357
C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5086/2N5087/MMBT5086/MMBT5087, Rev A
23102477.012.png 23102477.013.png 23102477.014.png 23102477.015.png 23102477.001.png 23102477.002.png 23102477.003.png 23102477.004.png
 
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA= 25 ° C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
OFF CHARACTERISTICS
V (BR)CEO
Collector-Emitter Breakdown Voltage* I C = 1.0 mA, I B = 0
50
V
V (BR)CBO
Collector-Base Breakdown Voltage
I C = 100
A, I E = 0
50
V
I CBO
Collector Cutoff Current
V CB = 10 V, I E = 0
V CB = 35 V, I E = 0
10
50
nA
nA
I EBO
Emitter Cutoff Current
V EB = 3.0 V, I C = 0
50
nA
ON CHARA CTERISTICS
h FE
DC Current Gain
A, V CE = 5.0 V 5086
5087
I C = 1.0 mA, V CE = 5.0 V 5086
5087
I C = 10 mA, V CE = 5.0 V 5086
5087
150
250
150
250
150
250
500
800
V CE( sat )
Collector-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA
0.3
V
V BE( on )
Base-Emitter On Voltage
I C = 1.0 mA, V CE = 5.0 V
0.85
V
SMALL SI GNAL CHARACTERISTICS
f T
Current Gain - Bandwidth Product
I C = 500
A,V CE = 5.0 V,f= 20 MHz
40
MHz
C cb
Collector-Base Capacitance
V CB = 5.0 V, I E = 0, f = 100 kHz
4.0
pF
h fe
Small-Signal Current Gain
I C = 1.0 mA, V CE = 5.0, 5086
f = 1.0 kHz
150
250
600
900
3
5087
NF
Noise Figure
I C = 100
A, V CE = 5.0 V, 5086
3.0
2.0
dB
dB
R S = 3.0 k
, f = 1.0 kHz 5087
I C = 20
A, V CE = 5.0 V,
5086
3.0
2.0
dB
dB
R S = 10 k
,
5087
f = 10 Hz to 15.7 kHz
* Pulse Test: Pulse Width ≤
300
s, Duty Cycle
2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2 Isc=0
Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p Itf=.17 Vtf=5
Xtf=8 Rb=10)
I C = 100
23102477.005.png 23102477.006.png 23102477.007.png
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Em itt er Sa turation
Voltage vs Collect or Curre nt
35 0
V = 5V
CB
0. 3
= 10
30 0
125 °C
0.25
25 0
0. 2
20 0
25 °C
0.15
25 ° C
15 0
0. 1
125 ° C
10 0
- 40 °C
0.05
- 40 ° C
50
0.01 0.03 0.1 0.3
1
3
10 30 100
0
0. 1
1
1 0
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Bas e-Emitt er Sa turation
Voltage vs Collect or Curre nt
Bas e E mitter O N Voltage vs
Collect or Curre nt
1
1
0. 8
0. 8
- 40 °C
- 40 °C
0. 6
25 °C
0. 6
25 °C
125 °C
125 °C
0. 4
0. 4
0. 2
V = 5V
CE
0. 2
= 10
0
0
0.1
1
10
25
0.1
1
10
50
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Collect or-Cutoff Curre nt
vs Ambie nt Tem perature
Input and Output Capacitance
vs Reverse Bias Voltage
10 0
20
f = 1 MHz
V = 40V
CB
16
10
12
1
8
0. 1
C ib o
4
C obo
0.01
25
50
75
100
125
0
0
4
8
12
16
20
T - A MBI E NT T EMP ER AT UR E ( C)
°
REVERSE BIAS VOLTAGE (V)
A
23102477.008.png
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Gain Bandwidth Product
vs Collector Current
Noise Figure vs Frequency
5
V = 5V
CE
350
300
V = 5V
CE
4
250
3
200
I = - 250
C
A, R = 5.0 k
S
150
2
I = - 500
C
A, R = 1.0 k
S
100
1
50
I = - 20
C
A, R = 10 k
S
0
0.1
1
10
100
100
1000
10000
1000000
I - COLLECTOR CURRENT (mA)
C
f - FREQUENCY (Hz)
Wideband Noise Frequency
vs Source Resistance
Power Dissipation vs
Ambient Temperature
8
625
V = 5V
BANDWIDT H = 15.7 kHz
CE
TO-92
500
6
3
I = 10
C
A
375
SOT-23
4
250
2
I = 100 µ
C
A
125
0
0
1,000
2,000
5,000
10,000
20,000
50,000 100,000
0
25
50
75
100
125
150
R - SOURCE RESISTANCE ( )
TEMPERATURE ( C)
o
S
Equivalent Input Noise Current
vs Collector Current
Equivalent Input Noise Voltage
vs Collector Current
10
0.1
5
V = - 5.0V
CE
0.05
V = - 5.0V
CE
2
0.02
1
0.01
e , f = 100 Hz
n
0.5
0.005
e , f = 1.0 kHz
n
0.2
0.002
e , f = 10 kHz
n
0.1
0.001
0.01
0.1
1
0.001
0.001
0.01
0.1
1
I - COLLECTOR CURRENT (mA)
C
I - COLLECTOR CURRENT (mA)
C
0
23102477.009.png 23102477.010.png
PNP General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
1,000,000
1,000,000
V = - 5V
f = 100 Hz
BANDWIDTH = 15 Hz
CE
100,000
100,000
10, 000
10, 000
1,000
1,000
V = - 5V
f = 10 kHz
BANDWIDTH = 1.5 kHz
100
100
0.001
0.01
0.1
1
0.001
0.01
0.1
1
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
1,000,000
10,000
V = - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
5, 00 0
100,000
2, 00 0
10,000
1, 00 0
500
1,000
V = - 5V
f = 10 MHz
BAN DWI DT H
= - 2 kHz
CE
200
100
100
0.001
0.01
0.1
1
0.01
0.1
1
10
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
CE
C
CE
C
C
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