PIN-BAR67.pdf

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Genesys
BAR67...
Silicon PIN Diode
Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
Low forward resistance (typ. 1.5
@ 5mA)
Low harmonics
BAR67-02V
Type
Package
Configuration
L S (nH) Marking
BAR67-02V
SC79
single
0.6 T
Maximum Ratings at T A = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V R
150
V
Forward current
I F
200
mA
Total power dissipation
T S
P tot
250
mW
118°C
Junction temperature
T j
150
°C
Operating temperature range
T op
-55 ... 125
Storage temperature
T stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point 1) , BAR67-02V
R thJS
115
K/W
1 For calculation of R thJA please refer to Application Note Thermal Resistance
1
Feb-04-2003
For low loss RF switches and attenuators
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BAR67...
Electrical Characteristics at T A = 25°C, unless o therwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I (BR) = 5 µA
V (BR)
150
-
-
V
Reverse current
V R = 100 V
I R
-
-
20
nA
Forward voltage
I F = 50 mA
V F
-
0.95
1.2 V
AC Characteristics
Diode capacitance
V R = 5 V, f = 1 MHz
V R = 0 V, f = 100 MHz
V R = 0 V, f = 1 GHz
V R = 0 V, f = 1.8 GHz
C T
0.35
0.35
0.25
0.23
0.55
0.9
-
-
pF
-
-
-
-
Reverse parallel resistance
V R = 0 V, f = 100 MHz
V R = 0 V, f = 1 GHz
V R = 0 V, f = 1.8 GHz
R P
25
4
2.5
k
-
-
-
-
-
-
Forward resistance
I F = 5 mA, f = 100 MHz
I F = 10 mA, f = 100 MHz
r f
1.5
1
1.8
-
-
-
Charge carrier life time
I F = 10 mA, I R = 6 mA, measured at I R = 3 mA,
R L = 100
rr
-
700
-
ns
I-region width
W I
-
13
-
µm
2
Feb-04-2003
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BAR67...
Diode capacitance C T =
(V R )
Reverse parallel resistance R P =
( V R )
f = Parameter
f = Parameter
0.5
10
KOhm
4
F
10
3
0.4
0.35
1 MHz
100 MHz
1 GHz
1.8 GHz
10
2
100 MHz
0.3
10
1
1 GHz
0.25
1.8 GHz
0.2
10
0
0.15
0.1
10
-1
0
5
10
15
20
25
30
V
40
0
5
10
15
20
25
30
V
40
V R
V R
Forward resistance r f =
( I F )
Forward current I F =
( V F )
f = 100MHz
T A = Parameter
10
3
10
A
0
Ohm
10
-1
10
2
10
-2
10
1
10
-3
10
-4
-40 °C
25 °C
85 °C
125 °C
10
0
10
-5
10
-1
10
-6
10 -2
10 -1
10 0
10 1
mA
I F
10 2
0
0.2
0.4
0.6
0.8
V
1.2
V F
3
Feb-04-2003
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BAR67...
Forward current I F =
( T S )
Permissible Puls Load R thJS =
( t p )
BAR67-02V
BAR67-02V
250
10
3
mA
K/W
200
10
2
175
150
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
125
10
1
100
75
10
0
50
25
0
10
-1
0 15 30 45 60 75 90 105 120 °C 150
T S
10 -6
10 -5
10 -4
10 -3
10 -2
s
t P
10 0
Permissible Pulse Load
I Fmax / I FDC =
( t p )
BAR67-02V
10
2
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
10 -6
10 -5
10 -4
10 -3
10 -2
s
t P
10 0
4
Feb-04-2003
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