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DUAL 2-WIDE 2-INPUT AND-OR-INVERTER GATE
HCC/HCF4085B
DUAL 2-WIDE 2-INPUT AND-OR-INVERTER GATE
. MEDIUM-SPEED OPERATION – t PHL = 90ns ;
t PLH = 125ns (TYP.) AT 10V
. QUIESCENT CURRENT SPECIFIED TO 20V
. 5V, 10V, AND 15V PARAMETRIC RATINGS
. INPUT CURRENT OF 100nA AT 18V AND
25
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
. 100% TESTED FOR QUIESCENT CURRENT
. MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
°
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4085BF
HCF4085BM1
HCF4085BEY
HCF4085BC1
PIN CONNECTIONS
DESCRIPTION
The HCC4085B (extended temperature range) and
HCF4085B (intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micropackage.
The HCC/HCF4085B contains a pair of AND-OR-
INVERT gates, each consisting of two 2-input AND
gates driving a 3-input NOR gate. Individual inhibit
controls are provided for both A-O-I gates.
September 1988
1/13
. INDIVIDUAL INHIBIT CONTROLS
. STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
FOR HCC DEVICE
°
C FOR HCC DEVICE
21707473.002.png
HCC/HCF4085B
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD *
Supply Voltage : HCC Types
HCF Types
– 0.5 to + 20
– 0.5 to + 18
V
V
V i
Input Voltage
– 0.5 to V DD + 0.5
V
I I
DC Input Current (any one input)
±
10
mA
P tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T op = Full Package-temperature Range
200
mW
100
mW
T op
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
–40to+85
C
°
C
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device.This is a stress rating only
and functional operation of the device at those or any other conditions aboves those indicated in the operational sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V SS pin voltage.
Storage Temperature
– 65 to + 150
°
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage : HCC Types
HCF Types
3to18
3to15
V
V
V I
Input Voltage
0 to V DD
V
T op
Operating Temperature : HCC Types
HCF Types
–55to+125
–40to+85
C
°
C
2/13
°
T stg
°
21707473.003.png
HCC/HCF4085B
SCHEMATIC DIAGRAM
3/13
21707473.004.png
HCC/HCF4085B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V I
V O
|I O | V DD
T Low *
25
°
C
T Hi gh *
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I L
Quiescent
Current
0/ 5
5
1
0.02
1
30
HCC
Types
0/10
10
2
0.02
2
60
0/15
15
4
0.02
4
120
0/20
20
20
0.04 20
600
m
A
0/ 5
5
4
0.02
4
30
HCF
Types
0/10
10
8
0.02
8
60
0/15
15
16
0.02 16
120
V OH
Output High
Voltage
0/ 5
< 1
5
4.95
4.95
4.95
0/10
< 1 10 9.95
9.95
9.95
V
0/15
< 1 15 14.95
14.95
14.95
V OL
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
10/0
< 1 10
0.05
0.05
0.05
V
15/0
< 1 15
0.05
0.05
0.05
V IH
Input High
Voltage
0.5/4.5 < 1
5
3.5
3.5
3.5
1/9
< 1 10
7
7
7
V
1.5/13.5 < 1 15
11
11
11
V IL
Input Low
Voltage
4.5/0.5 < 1
5
1.5
1.5
1.5
9/1
< 1 10
3
3
3
V
13.5/1.5 < 1 15
4
4
4
I OH
Output
Drive
Current
0/ 5
2.5
5
– 2
– 1.6 – 3.2
– 1.15
HCC
Types
0/ 5
4.6
5 – 0.64
– 0.51 – 1
– 0.36
0/10
9.5
10 – 1.6
– 1.3 – 2.6
– 0.9
0/15 13.5
15 – 4.2
– 3.4 – 6.8
– 2.4
mA
0/ 5
2.5
5 – 1.53
– 1.36 – 3.2
– 1.1
HCF
Types
0/ 5
4.6
5 – 0.52
– 0.44 – 1
– 0.36
0/10
9.5
10 – 1.3
– 1.1 – 2.6
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
I OL
Output
Sink
Current
0/ 5
0.4
5
0.64
0.51
1
0.36
HCC
Types
0/10
0.5
10
1.6
1.3
2.6
0.9
0/15
1.5
15
4.2
3.4
6.8
2.4
mA
0/ 5
0.4
5
0.52
0.44
1
0.36
HCF
Types
0/10
0.5
10
1.3
1.1
2.6
0.9
0/15
1.5
15
3.6
3.0
6.8
2.4
I IH ,I IL Input
Leakage
Current
HCC
Types
0/18
18
±
0.1
±
10 –5
±
0.1
±
1
Any Input
m
A
HCF
Types
0/15
15
±
0.3
±
10 –5
±
0.3
±
1
C I
Input Capacitance
Any Input
5
7.5
pF
*T Low =–55
°
Cfor HCC device : – 40
°
C for HCF device.
C for HCF device.
The Noise Margin for both ”1” and ”0” level is :1V min. with V DD = 5V, 2V min. with V DD = 10V, 2.5min. with V DD = 15V.
°
Cfor HCC device : + 85
°
4/13
*T High = + 125
21707473.005.png
HCC/HCF4085B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25
°
C, C L = 50pF, R L = 200k
W
,
typical temperature coefficient for all V DD = 0.3%/
°
C values, all input rise and fall time = 20ns)
Symbol
Parameter
Test Conditions
Value
Unit
V DD (V) Min. Typ. Max.
t PHL
Propagation Delay Time (data)
5
225
450
10
90
180
15
65
130
ns
t PLH
Propagation Delay Time (data)
5
310
620
10
125
250
15
90
180
t PHL
Propagation Delay Time (inhibit)
5
150
300
10
60
120
15
40
80
ns
t PLH
Propagation Delay Time (inhibit)
5
250
500
10
100
200
15
70
140
t TLH ,t THL Transition Time
5
100
200
10
50
100
ns
15
40
80
Typical Voltage and Current Transfer Characteristics with Test Circuit.
5/13
21707473.001.png
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