BC549-550.pdf

Low Noise Transistors

NPN Silicon

BC549B,C

BC550B,C

MAXIMUM RATINGS

Rating

Symbol

BC549

BC550

Unit

Collector–Emitter Voltage

V CEO

Vdc

Collector–Base Voltage

V CBO

Vdc

Emitter–Base Voltage

V EBO

5.0

Vdc

Collector Current — Continuous

I C

100

mAdc

Total Device Dissipation @ T A = 25

P D

625

5.0

mW/

2 3

Derate above 25

Total Device Dissipation @ T C = 25

P D

1.5

Watt

mW/

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Derate above 25

Operating and Storage Junction

Temperature Range

T J , T stg

–55 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

COLLECTOR

Thermal Resistance, Junction to Ambient

R JA

200

C/W

Thermal Resistance, Junction to Case

R JC

83.3

C/W

BASE

EMITTER

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I C = 10 mAdc, I B = 0)

V (BR)CEO

Vdc

BC549B,C

BC550B,C

—

Collector–Base Breakdown Voltage

(I C = 10 m Adc, I E = 0)

V (BR)CBO

Vdc

BC549B,C

BC550B,C

—

Emitter–Base Breakdown Voltage

(I E = 10

V (BR)EBO

5.0

—

Vdc

Adc, I C = 0)

Collector Cutoff Current

(V CB = 30 V, I E = 0)

(V CB = 30 V, I E = 0, T A = +125

I CBO

—

5.0

nAdc

Adc

Emitter Cutoff Current

(V EB = 4.0 Vdc, I C = 0)

I EBO

—

nAdc

W Semiconductor Components Industries, LLC, 2001

February, 2001 – Rev. 1

Publication Order Number:

BC549B/D

BC549B,C BC550B,C

ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(I C = 10

h FE

—

Adc, V CE = 5.0 Vdc)

BC549B/550B

BC549C/550C

100

200

420

150

270

290

500

—

450

800

(I C = 2.0 mAdc, V CE = 5.0 Vdc)

BC549B/550B

BC549C/550C

Collector–Emitter Saturation Voltage

(I C = 10 mAdc, I B = 0.5 mAdc)

(I C = 10 mAdc, I B = see note 1)

(I C = 100 mAdc, I B = 5.0 mAdc, see note 2)

V CE(sat)

Vdc

—

0.075

0.3

0.25

0.6

Base–Emitter Saturation Voltage

(I C = 100 mAdc, I B = 5.0 mAdc)

V BE(sat)

—

1.1

—

Vdc

Base–Emitter On Voltage

(I C = 10 m Adc, V CE = 5.0 Vdc)

(I C = 100 m Adc, V CE = 5.0 Vdc)

(I C = 2.0 mAdc, V CE = 5.0 Vdc)

V BE(on)

Vdc

—

0.55

0.52

0.55

0.62

—

0.7

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I C = 10 mAdc, V CE = 5.0 Vdc, f = 100 MHz)

f T

—

250

—

MHz

Collector–Base Capacitance

(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)

C cbo

—

2.5

—

Small–Signal Current Gain

(I C = 2.0 mAdc, V CE = 5.0 V, f = 1.0 kHz)

h fe

—

BC549B/BC550B

BC549C/BC550C

240

450

330

600

500

900

Noise Figure

(I C = 200

Adc, V CE = 5.0 Vdc, R S = 2.0 k

, f = 1.0 kHz)

NF 1

NF 2

—

0.6

—

2.5

(I C = 200

Adc, V CE = 5.0 Vdc, R S = 100 k

, f = 1.0 kHz)

NOTES:

1. I B is value for which I C = 11 mA at V CE = 1.0 V.

2. Pulse test = 300

s – Duty cycle = 2%.

R S

i n

e n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

http://onsemi.com

BC549B,C BC550B,C

2.0

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1.5

V CE = 10 V

T A = 25 ° C

1.0

V BE(sat) @ I C /I B = 10

V BE(on) @ V CE = 10 V

0.8

0.6

0.4

0.3

V CE(sat) @ I C /I B = 10

0.2

0.5

1.0 2.0

5.0

100

200

0.1

0.2

0.5

1.0 2.0

5.0

100

I C , COLLECTOR CURRENT (mAdc)

Figure 2. Normalized DC Current Gain

Figure 3. “Saturation” and “On” Voltages

400

300

7.0

200

T A = 25 ° C

5.0

C ib

100

V CE = 10 V

T A = 25 ° C

3.0

C ob

2.0

0.5

0.7

1.0

2.0

5.0 7.0 10

1.0

0.4 0.6

1.0

2.0

4.0

I C , COLLECTOR CURRENT (mAdc)

V R , REVERSE VOLTAGE (VOLTS)

Figure 4. Current–Gain — Bandwidth Product

Figure 5. Capacitance

170

160

150

140

V CE = 10 V

f = 1.0 kHz

T A = 25 ° C

130

120

0.1

0.2

0.5

1.0

2.0

5.0

I C , COLLECTOR CURRENT (mAdc)

Figure 6. Base Spreading Resistance

http://onsemi.com

BC549B,C BC550B,C

PACKAGE DIMENSIONS

CASE 029–04

(TO–226AA)

ISSUE AD

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

MILLIMETERS

DIM MIN MAX MIN MAX

A 0.175

0.205

4.45

5.20

B 0.170

0.210

4.32

5.33

C 0.125

0.165

3.18

4.19

D 0.016

0.022

0.41

0.55

F 0.016

0.019

0.41

0.48

G 0.045

0.055

1.15

1.39

H 0.095

0.105

2.42

2.66

SECTION X–X

J 0.015

0.020

0.39

0.50

K 0.500

---

12.70

---

L 0.250

---

6.35

---

N 0.080

0.105

2.04

2.66

P ---

0.100

---

2.54

R 0.115

---

2.93

---

V 0.135

---

3.43

---

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

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BC549B/D

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