2SA1312.pdf

2SA1312

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1312

Audio Frequency Low Noise Amplifier Applications

Unit: mm

• High voltage: V CEO = −120 V

• Excellent h FE linearity: h FE (I C = −0.1 mA)/ h FE (I C = −2 mA)

h= 0.95 (typ.)

• High h FE: h FE = 200~700

• Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz

• Complementary to 2SC3324

• Small package

Maximum Ratings (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

V CBO

− 120

Collector-emitter voltage

V CEO

− 120

Emitter-base voltage

V EBO

− 5

Collector current

I C

− 100

Base current

I B

− 20

JEDEC

TO-236MOD

Collector power dissipation

P C

150

JEITA

SC-59

Junction temperature

T j

125

°C

TOSHIBA

2-3F1A

Storage temperature range

T stg

− 55~125

°C

Weight: 0.012 g (typ.)

Marking

2003-03-27

2SA1312

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

I CBO

CB = − 120 V, I E = 0

  − 0.1 µ A

Emitter cut-off current

I EBO

EB = − 5 V, I C = 0

  − 0.1 µ A

DC current gain

h FE

(Note)

V CE = − 6 V, I C = − 2 mA

200 

700

Collector-emitter saturation voltage

V CE (sat) I C = − 10 mA, I B = − 1 mA

  − 0.3

Transition frequency

f T

V CE = − 6 V, I C = − 1 mA



100 

MHz

Collector output capacitance

C ob

CB = − 10 V, I E = 0, f = 1 MHz



4 

NF (1)

V CE = − 6 V, I C = − 0.1 mA, f = 100 Hz,

Rg = 10 k Ω

 0.5

Noise figure

V CE = − 6 V, I C = − 0.1 mA, f = 1 kHz,

Rg = 10 k Ω

NF (2)

 0.2

Note: h FE classification GR (G): 200~400, BL (L): 350~700

( ) marking symbol

2003-03-27

2SA1312

2003-03-27

2SA1312

2003-03-27

2SA1312

RESTRICTIONS ON PRODUCT USE

000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

2003-03-27

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