BUL38D.pdf

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BUL38D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
[
STMicroelectronics PREFERRED
SALESTYPE
n
HIGH VOLTAGE CAPABILITY
n
LOW SPREAD OF DYNAMIC PARAMETERS
n
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n
LOW BASE-DRIVE REQUIREMENTS
n
VERY HIGH SWITCHING SPEED
n
FULLY CHARACTERISED AT 125 o C
3
n
2
HIGH RUGGEDNESS
n
1
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
n
TO-220
APPLICATIONS
n
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
n
DESCRIPTION
The BUL38D is manufactured using high voltage
Multi
INTERNAL SCHEMATIC DIAGRAM
Epitaxial
Planar
technology
for
high
switching
speeds and
high
voltage withstand
capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
800
V
V CEO
Collector-Emitter Voltage (I B = 0)
450
V
V EBO
Emitter-Base Voltage (I C =0)
9
V
I C
Collector Current
5
V
I CM
Collector Peak Current (t p <5 ms)
10
A
I B
Base Current
2
A
I BM
Base Peak Current (t p <5 ms)
4
A
o C
P tot
Total Dissipation at Tc = 25
80
W
o C
T stg
Storage Temperature
-65 to 150
o C
T j
Max. Operating Junction Temperature
150
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June 2000
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BUL38D
THERMAL DATA
o C/W
o C/W
R thj-case
R t hj- amb
Thermal Resistance Junction-Case
Max
1.56
62.5
Thermal Resistance Junction-Ambient
Max
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CES
Collector Cut-off
Current (V BE =0)
V CE =800V
V CE =800V
100
500
A
m
T j =125 o C
m
A
I CEO
Collector Cut-off
Current (I B =0)
V CE = 450 V
250
m
A
V CEO(sus )
Collector-Emitter
Sustaining Voltage
(I B =0)
I C = 100 mA
L = 25 mH
450
V
*
V EBO
Emitter-Base Voltage
(I C =0)
I E =10mA
9
V
V CE(sat) *
Collector-Emitter
Saturation Voltage
I C =1A
I B =0.2A
0.5
0.7
1.1
V
V
V
I C =2A
I B =0.4A
I C =3A
I B =0.75A
V BE(s at) *
Base-Emitter
Saturation Voltage
I C =1A
I B =0.2A
1.1
1.2
V
V
I C =2A
I B =0.4A
h FE
*
DC Current Gain
I C =10mA
V CE =5V
10
I C =0.5A
V CE =5V
60
I C =2A
V CE =5V
Group A
Group B
13
22
23
32
RESISTIVE LOAD
Storage Time
Fall Time
I C =2.5A
V CC =150V
t s
t f
1.0
2.2
0.8
m
s
I B1 =-I B2 =0.5A
t p =30
m
s
m
s
INDUCTIVE LOAD
Storage Time
Fall Time
I C =2A
I B1 =0.4A
t s
t f
1
55
1.8
100
m
s
ns
V BE(of f) =-5V
R BB =0
W
V CL = 250 V
L = 200
m
H
INDUCTIVE LOAD
Storage Time
Fall Time
I C =2A
I B1 =0.4A
t s
t f
1.3
100
m
s
ns
V BE(of f) =-5V
R BB =0
W
V CL = 250 V
L = 200
m H
T j =125 o C
V f
Diode Forward Voltage
I C =2A
1.5
V
*
s, duty cycle 1.5 %.
The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
Pulsed: Pulse duration = 300
m
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BUL38D
Safe Operating Area
Derating Curve
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
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BUL38D
Inductive Storage Time
Inductive Fall Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
4/6
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BUL38D
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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