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QUAD EXCLUSIVE OR GATE
HCC/HCF4030B
. MEDIUM-SPEED OPERATION – t PHL =t PLH =
60ns (typ.) @ C L = 50pF and V DD –V SS = 10V
QUAD EXCLUSIVE-OR GATE
. QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
(typ.) @
V DD –V SS = 10V
. STANDARDIZED SYMMETRICAL OUTPUT
. 5V, 10V, AND 15V PARAMETRIC RATINGS
. INPUT CURRENT OF 100nA AT 18V AND 25 ° C
FOR HCC DEVICE
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
. 100% TESTED FOR QUIESCENT CURRENT
. MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD N
M1
(Micro Package)
C1
(Plastic Chip Carrier)
13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
°
ORDER CODES :
HCC4030BF
HCF4030BM1
HCF4030BEY
HCF4030BC1
PIN CONNECTIONS
DESCRIPTION
The HCC4030B (extended temperature range) and
HCF4030B (intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micro package.
The HCC/HCF4030B types consist of four inde-
pendent exclusive-OR gates integrated on a single
monolithic silicon chip. Each exclusive-OR gate con-
sists of four n-channel and four p-channel enhance-
ment-type transistors. All inputs and outputs are
protected against electrostatic effects.
November 1996
1/12
. LOW OUTPUT IMPEDANCE : 500 W
CHARACTERISTICS
292843417.002.png
HCC/HCF4030B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD *
Supply Voltage : HCC Types
HCF Types
– 0.5 to + 20
– 0.5 to + 18
V
V
V i
Input Voltage
– 0.5 to V DD + 0.5
V
I I
DC Input Current (any one input)
±
10
mA
P tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T op = Full Package-temperature Range
200
mW
100
mW
T op
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
–40to+85
C
°
C
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specifi cation is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
Storage Temperature
– 65 to + 150
°
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage : HCC Types
HCF Types
3to18
3to15
V
V
V I
Input Voltage
0 to V DD
V
T op
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
–40to+85
C
°
C
TRUTH TABLE
One of Four Identical Gates
A
B
J
0
1
0
1
0
0
1
0
0
1
1
0
Where ”1” = High level
”0” = Low level.
2/12
°
T stg
°
292843417.003.png
HCC/HCF4030B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V I
V O
|I O |V DD
T Low *
25
°
C
T Hi g h *
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I L
Quiescent
Current
0/ 5
5
1
0.02
1
30
HCC
Types
0/10
10
2
0.02
2
60
0/15
15
4
0.02
4
120
0/20
20
20
0.04 20
600
m
A
0/ 5
5
4
0.02
4
30
HCF
Types
0/10
10
8
0.02
8
60
0/15
15
16
0.02 16
120
V OH
Output High
Voltage
0/ 5
< 1
5
4.95
4.95
4.95
0/10
< 1 10 9.95
9.95
9.95
V
0/15
< 1 15 14.95
14.95
14.95
V OL
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
10/0
< 1 10
0.05
0.05
0.05
V
15/0
< 1 15
0.05
0.05
0.05
V IH
Input High
Voltage
0.5/4.5 < 1
5
3.5
3.5
3.5
1/9
< 1 10
7
7
7
V
1.5/13.5 < 1 15
11
11
11
V IL
Input Low
Voltage
4.5/0.5 < 1
5
1.5
1.5
1.5
9/1
< 1 10
3
3
3
V
13.5/1.5 < 1 15
4
4
4
I OH
Output
Drive
Current
0/ 5
2.5
5
– 2
– 1.6 – 3.2
– 1.15
HCC
Types
0/ 5
4.6
5 – 0.64
– 0.51 – 1
– 0.36
0/10
9.5
10 – 1.6
– 1.3 – 2.6
– 0.9
0/15 13.5
15 – 4.2
– 3.4 – 6.8
– 2.4
mA
0/ 5
2.5
5 – 1.53
– 1.36 – 3.2
– 1.1
HCF
Types
0/ 5
4.6
5 – 0.52
– 0.44 – 1
– 0.36
0/10
9.5
10 – 1.3
– 1.1 – 2.6
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
I OL
Output
Sink
Current
0/ 5
0.4
5
0.64
0.51
1
0.36
HCC
Types
0/10
0.5
10
1.6
1.3
2.6
0.9
0/15
1.5
15
4.2
3.4
6.8
2.4
mA
0/ 5
0.4
5
0.52
0.44
1
0.36
HCF
Types
0/10
0.5
10
1.3
1.1
2.6
0.9
0/15
1.5
15
3.6
3.0
6.8
2.4
I IH ,I IL Input
Leakage
Current
HCC
Types
0/18
18
±
0.1
±
10 –5
±
0.1
±
1
Any Input
m
A
HCF
Types
0/15
15
±
0.3
±
10 –5
±
0.3
±
1
C I
Input Capacitance
Any Input
5
7.5
pF
*T Lo w =–55
°
Cfor HCC device : – 40
°
C for HCF device.
Cfor HCF device.
The Noise Margin for both ”1” and ” 0” level is : 1V min. with V DD = 5V, 2V min. with V DD = 10V, 2.5 V min. with V DD = 15V.
°
Cfor HCC device : + 85
°
3/12
*T High = + 125
292843417.004.png
HCC/HCF4030B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25
°
C, C L = 50pF, R L = 200k
W
,
typical temperature coefficient for all V DD = 0.3%/
°
C values, all input rise and fall time = 20ns)
Symbol
Parameter
Test Conditions
Value
Unit
V CC (V) Min. Typ. Max.
t PLH ,t PHL Propagation Delay Time
5
140
280
10
65
130
ns
15
50
100
t TLH ,t THL Transition Time
5
100
200
10
50
100
ns
15
40
80
Typical Output Low (sink) Current Characteristics.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
4/12
292843417.005.png
HCC/HCF4030B
TYPICAL APPLICATIONS
EVEN-PARITY-BIT GENERATOR
(1-3/4 x HCC/HCF4030B ).
EVEN-PARITY-CHECKER
(2 x HCC/HCF4030B ).
ODD-PARITY-BIT GENERATOR
(2 x HCC/HCF4030B ).
ODD-PARITY CHECKER
(2 x HCC/HCF4030B ).
5/12
292843417.001.png

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