TPC8102.pdf

TPC8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)

TPC8102

Lithium Ion Battery Applications

Notebook PCs

Portable Equipment Applications

Unit: mm

Low drain−source ON resistance : R DS (ON) = 34 mΩ (typ.)

High forward transfer admittance : |Y fs | = 9 S (typ.)

Low leakage current : I DSS = −10 µA (max) (V DS = −30 V)

Enhancement−mode : V th = −0.8~ −2.0 V (V DS = −10 V, ID = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

V DSS −30

Drain-gate voltage (R GS = 20 kΩ)

V DGR −30

Gate-source voltage

V GSS

±20

JEDEC ―

(Note 1)

I D

−6

Drain current

Pulse (Note1)

I DP −24

JEITA

―

Drain power dissipation

(t = 10 s)

P D

2.4

(Note 2a)

TOSHIBA

2-6J1B

Drain power dissipation

(t = 10 s)

P D

1.0

Weight: 0.080 g (typ.)

(Note 2b)

Single pulse avalanche energy

E AS

(Note 3)

Avalanche current

I AR −6

Circuit Configuration

Repetitive avalanche energy

E AR

0.24

(Note 2a) (Note 4)

Channel temperature

T ch

150

°C

Storage temperature range

T stg −55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2003-02-20

Small footprint due to small and thin package

TPC8102

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a)

R th (ch-a)

52.1

°C/W

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

R th (ch-a)

125

°C/W

Marking (Note 5)

TPC8102

Type

※

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

(b)

Note 3: V DD = −24 V, T ch = 25°C (initial), L = 1.0 mH, R G = 25 Ω, I AR = −6 A

Note 4: Reptitve rating; pulse width limited by maximum channel temperature.

Note 5: ●

on lower left of the marking indicates Pin 1.

※ Weekly code:(Three digits)

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

2003-02-20

TPC8102

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

I GSS

V GS = ±16 V , V DS = 0 V

—

±10

µA

Drain cut−off current

I DSS

V DS = −30 V , V GS = 0 V

—

— −10

µA

Drain −source breakdown

voltage

V (BR) DSS I D = −10 mA , V GS = 0 V

−30

—

Gate threshold voltage

V th

V DS = −10 V, I D = −1 mA

−0.8

— −2.0

R DS (ON) V GS = −4 V, I D = −3 A

—

mΩ

Drain−source ON resistance

R DS (ON) V GS = −10 V, I D = −3 A

—

mΩ

Forward transfer admittance

|Y fs |

V DS = −10 V, I D = −3 A

4.5

—

Input capacitance

C iss

—

1380

—

Reverse transfer capacitance

C rss

V DS = −10 V, V GS = 0 V, f = 1 MHz

—

220

—

Output capacitan ce

C oss

—

560

—

Rise time

t r

—

Turn−on time

t on

—

Switching time

Fall time

t f

—

Turn−off time

t off

—

Total gate charge (Gate−source

plus gate−drain)

Q g

—

Gate−source charge

Q gs

V DD ≈ −24 V, V GS = −10 V, I D = −6 A

—

Gate−drain (“miller”) charge

Q gd

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

I DRP

—

— −24

Forward voltage (diode)

V DSF

I DR = −6 A, V GS = 0 V

—

1.2

2003-02-20

TPC8102

2003-02-20

TPC8102

2003-02-20

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