AO4407.pdf

AO4407

30V P-Channel MOSFET

General Description

Features

The AO4407/L uses advanced trench technology to

provide excellent R DS(ON) , and ultra-low low gate

charge with a 25V gate rating. This device is suitable

for use as a load switch or in PWM

applications. AO4407 and AO4407L are electrically

identical.

-RoHS Compliant

-AO4407L is Halogen Free

V DS (V) = -30V

I D = -12 A (V GS = -20V)

R DS(ON) < 13m Ω (V GS = -20V)

R DS(ON) < 14m Ω (V GS = -10V)

R DS(ON ) < 38m Ω (V GS = -5V)

100% UIS Tested

100% R g Tested

SOIC-8

Top View Bottom View

Absolute Maximum Ratings T A =25°C unless otherwise noted

Parameter

Symbol

V DS

V GS

Maximum

Units

Drain-Source Voltage

-30

Gate-Source Voltage

±25

Continuous Drain

Current AF

T A =25°C

T A =70°C

-12

I D

-10

-60

Pulsed Drain Current B

I DM

I AR

E AR

Avalanche Current G

Repetitive avalanche energy L=0.3mH G

-30

135

T A =25°C

3.1

P D

Power Dissipation A

T A =70°C

-55 to 150

T J , T STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient A

t ≤ 10s

°C/W

R θ JA

Maximum Junction-to-Ambient A

Steady-State

°C/W

Maximum Junction-to-Lead C

R θ JL

Steady-State

°C/W

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407

Electrical Characteristics (T J =25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV DSS

Drain-Source Breakdown Voltage

I D =-250 µ A, V GS =0V

-30

V DS =-30V, V GS =0V

-1

I DSS

Zero Gate Voltage Drain Current

µ A

T J =55°C

-5

I GSS

Gate-Body leakage current

V DS =0V, V GS =±25V

±100

V GS(th)

Gate Threshold Voltage

V DS =V GS I D =-250 µ A

-1.7

-2.5

-3

I D(ON)

On state drain current

V GS =-10V, V DS =-5V

V GS =-10V, I D =-10A

m Ω

T J =125°C

R DS(ON)

Static Drain-Source On-Resistance

m Ω

V GS =-20V, I D =-10A

m Ω

V GS =-5V, I D =-10A

g FS

Forward Transconductance

Diode Forward Voltage

V DS =-5V, I D =-10A

V SD

I S =-1A,V GS =0V

-0.72

-1

Maximum Body-Diode Continuous Current

I S

-4.2

DYNAMIC PARAMETERS

C iss

Input Capacitance

Output Capacitance

2076

2500

C oss

V GS =0V, V DS =-15V, f=1MHz

503

C rss

Reverse Transfer Capacitance

302

423

R g

Gate resistance

V GS =0V, V DS =0V, f=1MHz

Ω

SWITCHING PARAMETERS

Total Gate Charge

Q g

37.2

Q gs

Gate Source Charge

Gate Drain Charge

V GS =-10V, V DS =-15V, I D =-12A

Q gd

10.4

t D(on)

Turn-On DelayTime

12.4

t r

Turn-On Rise Time

Turn-Off DelayTime

V GS =-10V, V DS =-15V, R L =1.25 Ω ,

R GEN =3 Ω

8.2

t D(off)

25.6

t f

Turn-Off Fall Time

t rr

I F =-12A, dI/dt=100A/ µ s

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q rr

I F =-12A, dI/dt=100A/ µ s

A: The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

T A =25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300 µ s pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.

Rev12: Nov 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-8V

-6V

-10V

V DS =-5V

-5.5V

-5V

-4.5V

125°C

V GS =-4V

25°C

1.5

2.5

3.5

4.5

-V DS (Volts)

Fig 1: On-Region Characteristics

-V GS (Volts)

Figure 2: Transfer Characteristics

1.6

I D =-10A

V GS =-5V

1.4

V GS =-10V

1.2

V GS =-10V

V GS =-5V

0.8

100

125

150

175

-I D (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

1.0E+01

1.0E+00

I D =-10A

1.0E-01

125°C

1.0E-02

125°C

1.0E-03

1.0E-04

25°C

1.0E-05

1.0E-06

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-V SD (Volts)

Figure 6: Body-Diode Characteristics

-V GS (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

3000

V DS =-15V

I D =-12A

2500

C iss

2000

1500

C oss

1000

C rss

500

-Q g (nC)

Figure 7: Gate-Charge Characteristics

-V DS (Volts)

Figure 8: Capacitance Characteristics

1000.0

R DS(ON)

limited

T J(Max) =150°C

T A =25°C

100.0

10 µ s

10.0

100 µ s

1ms

10ms

1.0

0.1s

T J(Max) =150°C

T A =25°C

0.1

10s

0.0

0.001

0.01

0.1

100

1000

0.01

0.1

100

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

V DS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

D=T on /T

T J,PK =T A +P DM .Z θ JA .R θ JA

R θ JA =75°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P D

0.1

T on

Single Pulse

0.01

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

AO4407

Gate Charge Test Circuit & W aveform

Vgs

-10V

VDC

Qgs

Qgd

Vds

VDC

DUT

Vgs

Charge

Resistive Switching Test Circuit & Waveforms

Vds

off

d(off)

Vgs

d(on)

90%

DUT

Vdd

Vgs

VDC

Vgs

10%

Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

E = 1/2 LI AR

Vds

BV DSS

Vgs

Vdd

Vgs

VDC

I AR

DUT

Vgs

Diode Recovery Test Circuit & Waveforms

Q = - Idt

Vds +

DUT

Vgs

t rr

Vds -

-Isd

-I

Isd

dI/dt

VDC

-I

Vdd

Vgs

Vdd

-Vds

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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