2N4403.pdf
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2N4403
MMBT4403
C
E
TO-92
C
B
E
B
SOT-23
Mark: 2T
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
600
mA
Operating and Storage Junction Temperature Range
-55 to +150
T
J
, T
stg
°
C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Therm
al Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N4403
*MMBT4403
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
350
2.8
mW
mW/
°
C
Thermal Resistance, Junction to Case
83.3
R
q
JC
°
C/W
R
q
JA
Thermal Resistance, Junction to Ambient
200
357
°
C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã
2001 Fairchild Semiconductor Corporation
2N4403/MMBT4403, Rev. C
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA =
25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHAR
ACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown VoltageI
C
= 0.1 mA, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 0.1 A, I
C
= 0
5.0
V
I
BEX
Base Cutoff Current
V
CE
= 35 V, V
EB
= 0.4 V
0.1
m
A
I
CEX
Collector Cutoff Current
V
CE
= 35 V, V
BE
= 0.4 V
0.1
m
A
ON CHAR
ACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 2.0 V*
I
C
= 500 mA, V
CE
= 2.0 V*
30
60
100
100
20
300
Collector-Emitter Saturation
Voltage*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.4
0.75
V
V
V
CE(sat)
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
0.75
0.95
1.3
V
V
V
BE(
sat
)
SMALL SI
GNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
200
MHz
Collector-Base Capacitance
V
CB
= 10 V, I
E
= 0,
f = 140 kHz
8.5
pF
C
cb
Emitter-Base Capacitance
V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
30
pF
C
eb
Input Impedance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.5
15
h
ie
k
W
x 10
-4
h
re
Voltage Feedback Ratio
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
0.1
8.0
Small-Signal Current Gain
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
60
500
h
fe
Output Admittance
I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0
100
h
oe
m
mhos
SWITCHIN
G CHARACTERISTICS
t
d
Delay Time
V
CC
= 30 V, I
C
= 150 mA,
15
ns
Rise Time
I
B1
= 15 mA
20
ns
t
r
Storage Time
V
CC
= 30 V, I
C
= 150 mA
225
ns
t
s
Fall Time
I
B1
= I
B2
= 15 mA
30
ns
t
f
*
Pulse Test: Pulse Width
£
300
m
s, Duty Cycle
£
2.0%
PNP General Purpose Amplifier
(continued)
Typical Characteristics
Collector-Emitt er Saturation
Voltage vs Collect or Curre nt
Typical Pulsed Current Gain
vs Collector Current
500
0. 5
= 10
V = 5V
CE
400
0. 4
125 °C
0. 3
300
25 °C
25 °C
200
0. 2
100
0. 1
125
°
C
- 40 °C
- 40
°
C
0
0
0.1
0.3
1
3
10
30
100
300
1
10
100
500
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRE NT (mA)
C
C
Base-Emitt er Saturation
Voltage vs Collect or Curre nt
Bas e E mitter O N Voltage vs
Collect or Curre nt
1
1
- 40 °C
- 40
°
C
0. 8
0. 8
25 °C
0. 6
0. 6
25 °C
125 °C
0. 4
0. 4
125°C
= 10
V = 5V
CE
0. 2
0. 2
0
0
1
10
100
500
0.1
1
10
25
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Input and Output Capacitance
vs Reverse Bias Voltage
Collect or-Cutoff Current
vs Ambie nt Temperature
20
10 0
V = 35V
CB
16
10
12
C
ib
1
8
0. 1
C
ob
4
0.01
0
25
50
75
100
125
0.1
1
10
50
T - A MBI E NT T EMP ER AT UR E ( C)
°
REVERSE BIAS VOLTAGE (V)
A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
Turn On and Turn Off Times
vs Collector Current
250
500
I
c
10
I
c
10
I = I =
I = I =
B1
B2
B1
B2
200
400
V = 15 V
cc
V = 15 V
cc
t
s
300
150
100
200
t
f
t
off
t
r
100
50
t
on
t
d
0
0
10
100
1000
10
100
1000
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA)
C
C
Rise Time vs Collector
and Turn On Base Currents
Power Dissipation vs
Ambient Temperature
1
50
SOT-223
20
0.75
TO-92
10
t = 15 V
r
0.5
SOT-23
5
30 ns
0.25
2
60 ns
1
0
10
100
500
0
25
50
75
100
125
150
I - COLLECTOR CURRENT (mA)
TEMPERATURE ( C)
o
C
PNP General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0kHz)
Common Emitter Characteristics
Common Emitter Characteristics
5
1.3
h
oe
h
re
h
ie
1.2
h
fe
h and h
re
2
h
re
h
fe
oe
h
oe
1.1
1
h
ie
0.5
1
h
ie
0.9
I = -10mA
C
V = -10 V
CE
0.2
T = 25 C
A
o
T = 25 C
A
o
h
fe
0.1
0.8
_
_
_
_
_
_
1
2
5
10
20
50
-4
-8
-12
-16
-20
I - COLLECTOR CURRENT (mA)
V - COLLECTOR VOLTAGE (V)
C
CE
Common Emitter Characteristics
1.5
I = -10mA
C
h
fe
h
ie
h
re
h
oe
1.4
V = -10 V
CE
1.3
1.2
1.1
h
oe
1
0.9
h
re
0.8
h
ie
0.7
0.6
h
fe
0.5
-40
-20
0
20
40
60
80
100
T - AMBIENT TEMPERATURE ( C)
o
A
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