rfp8n20.pdf

RFP8N20L

Data Sheet

July 1999

File Number 1514.3

8A, 200V, 0.600 Ohm, Logic Level,

N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is speciﬁcally designed for use with logic

level (5V) driving sources in applications such as

programmable controllers, automotive switching and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated

conduction at gate biases in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic circuit

supply voltages.

Features

• 8A, 200V

•r DS(ON) = 0.600 W

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,

TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

Formerly developmental type TA09534.

• Linear Transfer Characteristics

Ordering Information

• High Input Impedence

PART NUMBER

PACKAGE

BRAND

• Majority Carrier Device

RFP8N20L

TO-220AB

RFP8N20L

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

NOTE: When ordering, include the entire part number.

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

6-278

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

RFP8N20L

Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Speciﬁed

RFP8N20L

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DS

200

Drain to Gate Voltage (R GS = 20k W ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR

200

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I DM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D

Above T C = 25 o C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.48

W/ o C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T J , T STG

-55 to 150

o C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg

300

260

o o C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. T J = 25 o C to 125 o C.

Electrical Speciﬁcations T C = 25 o C, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNITS

Drain to Source Breakdown Voltage

BV DSS

I D = 250 m A, V GS = 0

200

Gate to Threshold Voltage

V GS(TH)

V GS = V DS , I D = 250 m A

Zero Gate Voltage Drain Current

I DSS

V DS = 0.8 x Rated BV DSS

T C = 25 o C

m A

V DS = 0.8 x Rated BV DSS

T C = 125 o C

m A

Gate to Source Leakage Current

I GSS

V GS = 10V, V DS = 0

100

Drain to Source On-Voltage (Note 2)

V DS(ON)

I D = 8A, V GS = 5V

4.8

Drain to Source On Resistance (Note 2)

r DS(ON)

I D = 4A, V GS = 5V

0.600

Turn On Delay Time

t d(ON)

I D = 4A, V DD = 50V, R G = 6.25 , V GS = 5V

Rise Time

t r

150

Turn Off Delay Time

t d(OFF)

100

135

Fall Time

t f

105

Input Capacitance

C ISS

V GS = 0V, V DS = 25V, f = 1MHz

900

Output Capacitance

C OSS

250

Reverse Transfer Capacitance

C RSS

120

Thermal Resistance Junction to Case

RFP8N20L

2.083

o C/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNITS

Source to Drain Diode Voltage (Note 2)

V SD

I SD = 4A

1.4

Diode Reverse Recovery Time

t rr

I SD = 4A, dI SD /dt = 100A/ m s

250

NOTES:

2. Pulsed: pulse duration = 300 m s max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

6-279

RFP8N20L

Typical Performance Curves Unless Otherwise Speciﬁed

1.2

100

T C =25 o C

T J = MAX RATED

1.0

OPERATION IN THIS AREA

LIMITED BY r DS(ON)

0.8

0.6

DC OPERATION

60W

0.4

0.2

100

150

0.1

100

1000

T C , CASE TEMPERATURE ( o C)

V DS , DRAIN TO SOURCE (V)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. FORWARD BIAS SAFE OPERATING AREA

T C = 25 o C

V DS = 10V

PULSE DURATION = 80 m s

DUTY CYCLE = 0

5% MAX

PULSE DURATION = 80 m s

DUTY CYCLE = 0

5% MAX

-40 o C

25 o C

V GS = 10V

V GS = 5V

125 o C

V GS = 4V

V GS = 3V

V GS = 2V

125 o C

-40 o C

V DS, DRAIN TO SOURCE VOLTAGE (V)

V GS , GATE TO SOURCE VOLTAGE (V)

FIGURE 3. SATURATION CHARACTERISTICS

FIGURE 4. TRANSFER CHARACTERISTICS

1.2

V DS = 5V

PULSE DURATION = 80

2.0

I D = 4A, V GS = 5V

DUTY CYCLE = 0 . 5% MAX.

DUTY CYCLE = 0.5% MAX.

1.0

1.5

0.8

125 o C

0.6

25 o C

1.0

0.4

-40 o C

0.5

0.2

-50

100

150

I D, DRAIN CURRENT (A)

T J , JUNCTION TEMPERATURE ( o C)

FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

FIGURE 6. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

6-280

PULSE DURATION = 80

RFP8N20L

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

1.3

800

V DS = V GS

I D = 250 m A

1.2

700

1.1

600

C ISS

1.0

500

0.9

400

V GS = 0V, f = 1MHz

C ISS = C GS + C GD

C RSS = C GD

C OSS »

0.8

300

C DS + C GD

0.7

200

C OSS

C RSS

0.6

100

0.5

-50

100

150

T C , JUNCTION TEMPERATURE ( o C)

V DS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

200

BV DSS

R L = 25

I G(REF) = 0.45mA

V GS = 5V

150

100

V DD = BV DSS

GATE

SOURCE

VOLTAGE

0.75 BV DSS

0.50 BV DSS

0.25 BV DSS

DRAIN SOURCE VOLTAGE

I G(REF)

I G(ACT)

I G(REF)

I G(ACT)

t, TIME ( m s)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.

FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

Test Circuits and Waveforms

t ON

t d(ON)

t OFF

t d(OFF)

t r

t f

R L

V DS

90%

R G

V DD

10%

DUT

90%

V GS

50%

PULSE WIDTH

V GS

10%

FIGURE 10. SWITCHING TIME TEST CIRCUIT

FIGURE 11. RESISTIVE SWITCHING WAVEFORMS

6-281

RFP8N20L

Test Circuits and Waveforms (Continued)

V DS

R L

V DD

Q g(TOT)

V DS

V GS = 10V

V GS

Q g(5)

V DD

V GS

V GS = 5V

DUT

V GS = 1V

I G(REF)

Q g(TH)

I G(REF)

FIGURE 12. GATE CHARGE TEST CIRCUIT

FIGURE 13. GATE CHARGE WAVEFORMS

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