rfp12p10.pdf

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RFP12P08, RFP12P10
Data Sheet
June 1999
File Number 1495.2
12A,80Vand100V,0.300Ohm,P-Channel
Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
Features
• 12A, 80V and 100V
•r DS(ON) = 0.300 W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Formerly developmental type TA17511.
• Majority Carrier Device
Ordering Information
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
PART NUMBER
PACKAGE
BRAND
RFP12P08
TO-220AB
RFP12P08
Symbol
RFP12P10
TO-220AB
RFP12P10
D
NOTE: When ordering, include the entire part number.
G
S
Packaging
TO-220AB
DRAIN
(TAB)
SOURCE
DRAIN
GATE
4-161
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.
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RFP12P08, RFP12P10
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified
RFP12P08 RFP12P10
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DS
-80
-100
V
Drain to Gate Voltage (R GS = 20K W) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
-80
-100
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
12
12
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
30
30
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
± 20
± 20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
75
75
W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.6
0.6
W/ o C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
-55 to 150
-55 to 150
o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
300
260
300
260
o o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 125 o C.
Electrical Specifications T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV DSS
I D = 250
m
A, V GS = 0
RFP12P08
-80
-
-
V
RFP12P10
-100
-
-
V
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250
m
A
-2
-
-4
V
Zero Gate Voltage Drain Current
I DSS
V DS = Rated BV DSS , V GS = 0V
-
-
1
m
A
V DS = 0.8 x Rated BV DSS , V GS = 0V,
T C = 125 o C
-
-
25
m
A
Gate to Source Leakage Current
I GSS
V GS =
±
20V, V DS = 0
-
-
±
100
nA
Drain to Source On Voltage (Note 2)
V DS(ON) I D = 12A, V GS = -10V
-
-
-3.6
V
Drain to Source On Resistance (Note 2)
r DS(ON)
I D = 12A, V GS = -10V, (Figures 6, 7)
-
-
0.300
W
Turn-On Delay Time
t d(ON)
12A, V DD = 50V,
R G =50
-
18
60
ns
Rise Time
t r
W
, R L = 4.1
W
, V GS = -10V
-
90
175
ns
(Figure 10)
Turn-Off Delay Time
t d(OFF)
-
144
275
ns
Fall Time
t f
-
94
175
ns
Input Capacitance
C ISS
V GS = 0V, V DS = -25V, f = 1MHz
(Figure 9)
-
-
1500
pF
Output Capacitance
C OSS
-
-
700
pF
Reverse Transfer Capacitance
C RSS
-
-
300
pF
Thermal Resistance, Junction to Case
R
q
JC
RFP12P08, RFP12P10
-
-
1.67
o C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V SD
I SD = -12A
-
-
1.4
V
Diode Reverse Recovery Time
t rr
I SD = -12A, dI SD /dt = 100A/
m
s
-
200
-
ns
2%
3. Repetitive rating: pulse width limited by maximum junction temperature.
£
300
m
s Max, Duty Cycle
£
4-162
I D »
NOTES:
2. Pulse Test: Pulse Width =
199641494.003.png
RFP12P08, RFP12P10
Typical Performance Curves
1.2
-14
-13
1.0
-12
-11
-10
-9
0.8
0.6
-8
-7
-6
-5
-4
-3
-2
-1
0
0.4
0.2
0
0
50
100
150
25
50
75
100
125
150
T C , CASE TEMPERATURE ( o C)
T C , CASE TEMPERATURE ( o C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
OPERATION IN THIS AREA
LIMITED BY r DS(ON)
T C = 25 o C
40
PULSE DURATION = 80 m s
T J = MAX RATED
DUTY CYCLE = 0.5% MAX
V GS = -10V
V GS = -9V
I D MAX CONTINUOUS
30
V GS = -20V
V GS = -8V
10
DC
20
V GS = -7V
1
V GS = -6V
RFP12P08
10
V GS = -5V
RFP12P10
V GS = -3V
V GS = -4V
0.1 1
10
100
1000
0
0
-2
-4
-6
-8
-10
V DS , DRAIN TO SOURCE (V)
V DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
20
0.4
V DS = -10V
PULSE DURATION = 80
-40 o C
25 o C
V GS = -10V
PULSE DURATION = 80 m s
m
s
125 o C
16
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
0.3
125 o C
12
0.2
25 o C
8
-40 o C
4
0.1
125 o C
-40 o C
0
0
0
-2
-3
-4
-5
-6
-7
-8
02
4
6
8
10
2
14
16
18
0
V GS, GATE TO SOURCE VOLTAGE (V)
I D, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-163
T C = 25 o C
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RFP12P08, RFP12P10
Typical Performance Curves (Continued)
2.0
I D = 12A, V GS = -10V
PULSE DURATION = 80 m s
DUTY CYCLE = 0.5% MAX
1.3
I D = 250
m
A
1.2
V DS = V GS
1.5
1.1
1.0
1.0
0.9
0.5
0.8
0.7
0
0.6
-50
0
50
100
150
-50
0 50 100
T J, JUNCTION TEMPERATURE ( o C)
150
T J, JUNCTION TEMPERATURE ( o C)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
2400
100
10
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C RSS = C GD
C OSS » C DS + C GD
2000
V DD = BV DSS
GATE
SOURCE
VOLTAGE
V DD = BV DSS
8
75
1600
R L = 8.3
I G(REF) = 0.92mA
V GS = -10V
6
1200
C ISS
50
0.75BV DSS 0.75BV DSS
0.50BV DSS
0.25BV DSS
0.50BV DSS
4
800
0.25BV DSS
C OSS
25
400
DRAIN SOURCE
2
VOLTAGE
C RSS
0
0
0
0
10
20
30
40
50
I G(REF)
I G(ACT)
I G(REF)
I G(ACT)
V DS, DRAIN TO SOURCE VOLTAGE (V)
20
t, TIME (
m
s)
80
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
t ON
t OFF
t d(ON)
t d(OFF)
t r
t f
R L
0
10%
10%
DUT
- V DD
V DS
90%
90%
R G
V GS
+
V GS
0
10%
50%
50%
PULSE WIDTH
90%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
4-164
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RFP12P08, RFP12P10
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersilsemiconductorproductsaresoldbydescriptiononly.IntersilCorporationreservestherighttomakechangesincircuitdesignand/orspecificationsatanytimewith-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
4-165
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