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199639878 UNPDF
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MF122/D
For Isolated Package Applications
Designed for general–purpose amplifiers and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
•
Electrically Similar to the Popular TIP122 and TIP127
COMPLEMENTARY
SILICON
POWER DARLINGTONS
5 AMPERES
100 VOLTS
30 WATTS
•
100 V CEO(sus)
•
5 A Rated Collector Current
•
No Isolating Washers Required
•
Reduced System Cost
•
High DC Current Gain — 2000 (Min) @ I C = 3 Adc
•
UL Recognized, File #E69369, to 3500 V RMS Isolation
CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
100
Vdc
Collector–Base Voltage
V CB
100
Vdc
Emitter–Base Voltage
V EB
5
Vdc
RMS Isolation Voltage (1)
Test No. 1 Per Fig. 14
V ISOL
4500
3500
1500
V RMS
(for 1 sec, R.H. < 30%,
Test No. 2 Per Fig. 15
T A = 25 C)
Test No. 3 Per Fig. 16
Collector Current — Continuous
Peak
I C
5
8
Adc
Base Current
I B
0.12
Adc
Total Power Dissipation* @ T C = 25 C
Derate above 25 C
P D
30
0.24
Watts
W/ C
Total Power Dissipation @ T A = 25 C
Derate above 25 C
P D
2
0.016
Watts
W/ C
Operating and Storage Junction Temperature Range
T J , T stg
– 65 to + 150
I C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q JA
62.5
C/W
Thermal Resistance, Junction to Case*
R
q
JC
4.1
C/W
C
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of . 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
Lead Temperature for Soldering Purpose
T L
260
Motorola Bipolar Power Transistor Device Data
Motorola, Inc. 1995
1
W
199639878.009.png 199639878.010.png 199639878.011.png 199639878.012.png
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I C = 100 mAdc, I B = 0)
V CEO(sus)
100
—
Vdc
Collector Cutoff Current
(V CE = 50 Vdc, I B = 0)
I CEO
—
10
m Adc
Collector Cutoff Current
(V CB = 100 Vdc, I E = 0)
I CBO
—
10
m Adc
Emitter Cutoff Current (V BE = 5 Vdc, I C = 0)
I EBO
—
2
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (I C = 0.5 Adc, V CE = 3 Vdc)
DC Current Gain (I C = 3 Adc, V CE = 3 Vdc)
h FE
1000
2000
—
—
—
Collector–Emitter Saturation Voltage (I C = 3 Adc, I B = 12 mAdc)
Collector–Emitter Saturation Voltage (I C = 5 Adc, I B = 20 mAdc)
V CE(sat)
—
—
2
3.5
Vdc
Base–Emitter On Voltage (I C = 3 Adc, V CE = 3 Vdc)
V BE(on)
—
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain (I C = 3 Adc, V CE = 4 Vdc, f = 1 MHz)
h fe
4
—
—
Output Capacitance
MJF127
C ob
—
—
300
200
pF
(V CB = 10 Vdc, I E = 0, f = 0.1 MHz)
MJF122
(1) Pulse Test: Pulse Width 300 m s, Duty Cycle 2%.
5
R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D 1 , MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE I B
V CC
– 30 V
3
t s
100 mA
MSD6100 USED BELOW I B 9 100 mA
9
2
R C
SCOPE
t f
TUT
1
V 2
APPROX.
+8 V
R B
0.7
0.5
0
51
D 1
9
8 k
9
120
0.3
t r
t d @ V BE(off) = 0 V
V 1
APPROX.
–12 V
0.2
V CC = 30 V
I C /I B = 250
I B1 = I B2
T J = 25 ° C
+ 4 V
25 m s
0.1
PNP
NPN
t r , t f 3 10 ns
DUTY CYCLE = 1%
FOR t d AND t r , D 1 IS DISCONNECTED
AND V 2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.07
0.05
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
I C , COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit
Figure 2. Typical Switching Times
2
Motorola Bipolar Power Transistor Device Data
199639878.001.png 199639878.002.png 199639878.003.png
T A T C
4
80
3
60
T C
2
40
1
20
T A
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (
C)
Figure 3. Maximum Power Derating
1
0.5
0.3
0.2
0.1
SINGLE PULSE
R
q JC
T J(pk) – T C = P (pk) R
q JC(t) = r(t) R
0.05
q JC (t)
0.03
0.02
0.01
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200
300
500
1K
2K
3K
5K
10K
t, TIME (ms)
Figure 4. Thermal Response
10
100 m s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate I C – V CE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150 C; T C is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T J(pk)
< 150 C. T J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by secondary breakdown.
5
3
T J = 150 ° C
1 ms
2
dc
5 ms
1
0.5
CURRENT LIMIT
SECONDARY BREAKDOWN
LIMIT
THERMAL LIMIT @
T C = 25 ° C (SINGLE PULSE)
0.3
0.2
0.1
1
2
3
5
10
20
30
50
100
V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
°
199639878.004.png 199639878.005.png
10,000
300
5000
T J = 25
C
3000
200
2000
1000
500
300
C ob
C
V CE = 4 Vdc
I C = 3 Adc
°
100
200
100
70
C ib
50
50
30
20
PNP
NPN
PNP
NPN
10
30
1
2
5
10
20
50
100
200
500
1000
0.1
0.2
0.5
1
2
5
10
20
50
100
f, FREQUENCY (kHz)
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Small–Signal Current Gain
Figure 7. Typical Capacitance
NPN
MJF122
PNP
MJF127
20,000
20,000
V CE = 4 V
V CE = 4 V
10,000
10,000
7000
5000
T J = 150 ° C
5000
T J = 150 ° C
3000
3000
2000
2000
25 ° C
25
°
C
1000
1000
700
500
– 55 ° C
500
– 55 ° C
300
300
200
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
200
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
I C , COLLECTOR CURRENT (AMP)
I C , COLLECTOR CURRENT (AMP)
Figure 8. Typical DC Current Gain
3
3
T J = 25 ° C
T J = 25 ° C
2.6
2.6
I C = 2 A
4 A
6 A
I C = 2 A
4 A
6 A
2.2
2.2
1.8
1.8
1.4
1.4
1
1
0.3
0.5 0.7
1
2
3
5
7
10
20 30
0.3
0.5 0.7
1
2
3
5
7
10
20 30
I B , BASE CURRENT (mA)
I B , BASE CURRENT (mA)
Figure 9. Typical Collector Saturation Region
4
Motorola Bipolar Power Transistor Device Data
°
T C = 25
199639878.006.png 199639878.007.png
NPN
MJF122
PNP
MJF127
3
3
T J = 25 ° C
T J = 25 ° C
2.5
2.5
2
2
1.5
V BE(sat) @ I C /I B = 250
1.5
V BE @ V CE = 4 V
1
V BE @ V CE = 4 V
V CE(sat) @ I C /I B = 250
1
V BE(sat) @ I C /I B = 250
0.5
0.5
V CE(sat) @ I C /I B = 250
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
I C , COLLECTOR CURRENT (AMP)
I C , COLLECTOR CURRENT (AMP)
Figure 10. Typical “On” Voltages
+ 5
+ 5
+ 4
*I C /I B 3 h FE 3
+ 4
*I C /I B 3 h FE 3
+ 3
25
°
C to 150
°
C
+ 3
25
°
C to 150
°
C
+ 2
– 55 ° C to 25 ° C
+ 2
+ 1
+ 1
0
0
– 1
* q VC FOR V CE(sat)
– 1
* q VC FOR V CE(sat)
– 2
– 2
– 55
°
C to 25
°
C
– 3
25 ° C to 150 ° C
– 3
q VB FOR V BE
– 4
– 55
°
C to 25
°
C
– 4
– 55 ° C to 25 ° C
25
°
C to 150
°
C
q VB FOR V BE
– 5
– 5
0.1
0.2
0.3
0.5
0.7
1
2
3
5
7
10
0.1
0.2
0.3
0.5
1
2
3
5
7
10
I C , COLLECTOR CURRENT (AMP)
I C , COLLECTOR CURRENT (AMP)
Figure 11. Typical Temperature Coefficients
10 5
10 5
REVERSE
FORWARD
REVERSE
FORWARD
10 4
10 4
10 3
V CE = 30 V
10 3
V CE = 30 V
10 2
10 2
T J = 150 ° C
T J = 150
°
C
10 1
10 1
10 0
100
°
C
10 0
100 ° C
10 –1
25
°
C
10 –1
25
°
C
– 0.6
– 0.4
– 0.2
0
+ 0.2 + 0.4 + 0.6
+ 0.8 + 1 + 1.2 + 1.4
+ 0.6
+ 0.4
+ 0.2
0
– 0.2 – 0.4 – 0.6
– 0.8 – 1 – 1.2 – 1.4
V BE , BASE–EMITTER VOLTAGE (VOLTS)
V BE , BASE–EMITTER VOLTAGE (VOLTS)
Figure 12. Typical Collector Cut–Off Region
Motorola Bipolar Power Transistor Device Data
5
199639878.008.png

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