mgf1801.pdf

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MGF1801B
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
OUTLINE DRAWING
Unit:millimeters
4MIN.
1
4MIN.
0.5±0 .15
FEATURES
• High output power at 1dB gain compression
P 1dB =23dBm(TYP.)
@f=8GHz
2
2
• High linear power gain
G LP =9dB(TYP.)
@f=8GHz
• High reliability and stability
0.5±0.15
APPLICATION
S to X band medium-power amplifiers and oscillators.
3
2.5±0.2
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• V DS =6V
• I D =100mA
• Refer to Bias Procedure
1
GATE
SOURCE
DRAIN
2
GD-10
3
ABSOLUTE MAXIMUM RATINGS (T a =25˚C)
Symbol
Parameter
Ratings
Unit
V GDO
V GSO
Gate to drain voltage
-8
-8
V
V
Gate to source voltage
I D
Drain current
250
mA
I GR
I GF
Reverse gate current
Forward gate current
-0.6
1.5
mA
mA
P T
T ch
T stg
Total power dissipation *1
Channel temperature
Storage temperature
1.2
W
˚C
˚C
175
-65 to +175
*1:TC=25˚C
ELECTRICAL CHARACTERISTICS (T a =25˚C)
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
V (BR)GDO
V (BR)GSO
Gate to drain breakdown voltage
I G =-200µA
I G =-200µA
V GS =-3V,V DS =0V
-8
–
–
V
V
µA
Gate to source breakdown voltage
-8
–
–
I GSS
Gate to source leakage current
–
150
–
20
I DSS
V GS(off)
Saturated drain current
Gate source cut-off voltage
V GS =0V,V DS =3V
V DS =3V,I D =100µA
V DS =3V,I D =100mA
200
–
250
mA
V
-1.5
-4.5
g m
Transconductance
70
90
–
mS
G LP
Linear power gain
V DS =6V,I D =100mA,f=8GHz
7
9
–
dB
P 1dB
Output power at 1dB gain
compression
V DS =6V,I D =100mA,f=8GHz
21.8
23.0
–
dBm
R th(ch-c)
Thermal resistance *1
D
V f method
–
–
125
˚C/W
*1:Channel to ambient
Nov. ´97
214485813.015.png 214485813.016.png 214485813.017.png 214485813.018.png 214485813.001.png 214485813.002.png 214485813.003.png 214485813.004.png 214485813.005.png 214485813.006.png
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
TYPICAL CHARACTERISTICS (T a =25˚C)
I D vs. V DS
200
V GS =0V
V GS =-0.5V/step
100
0
0
2
4
6
8
10
DRAIN TO SOURCE VOLTAGE V DS (V)
P O vs. P in
(f=8GHz)
P O vs. P in
(f=12GHz)
30
30
I D =100mA
Gain:10dB
8
6 4 2
I D =100mA
Gain:10dB
8
6 4 2
25
25
20
20
P O
P O
15
15
10
10
5
5
0
V DS =6V
V DS =4V
0
V DS =6V
V DS =4V
-5
0
5
10
15
20
25
-5
0
5
10
15
20
25
INPUT POWER P in (dBm)
INPUT POWER P in (dBm)
Nov. ´97
214485813.007.png 214485813.008.png 214485813.009.png 214485813.010.png 214485813.011.png 214485813.012.png
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
S 11 ,S 22 vs. f.
S 21 ,S 12 vs. f.
+j50
+90˚
+j25
+j100
S 21
12.0GHz
0.5GHz
+j10
+j250
S 12
0.5GHz
12.0GHz
25
50
100
250
±180˚ 6
5
4
3
2
1
0
0˚
0
I S 21 I
12.0GHz
0.5GHz
12.0GHz
-j10
S 22
-j250
0.1
S 11
0.5GHz
-j25
-j100
T a =25˚C
V DS =6V
I D =100mA
0.2
-j50
-90˚
S PARAMETERS (Ta=25˚C,V DS =6V,I D =100mA)
Freq.
(GHz)
S 11
S 21
S 12
S 22
K
MSG/MAG
(dB)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn. Angle(deg.)
Magn. Angle(deg.)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
0.899
0.874
0.848
0.822
0.796
0.771
0.745
0.719
0.713
0.706
0.700
0.694
0.691
0.689
0.686
0.683
0.677
0.670
0.664
0.657
0.645
0.632
0.620
0.608
-56.8
-69.4
-82.1
-94.7
-107.4
-120.0
-132.7
-145.3
-153.3
-161.3
-169.3
-177.3
176.9
171.1
165.2
159.4
153.1
146.9
140.6
134.3
127.8
121.3
114.8
108.3
6.115
5.682
5.248
4.815
4.382
3.949
3.515
3.082
2.863
2.645
2.426
2.207
2.090
1.973
1.856
1.739
1.671
1.602
1.534
1.466
1.413
1.360
1.308
1.255
140.3
130.4
120.5
110.6
100.6
90.8
80.9
71.0
63.3
55.6
47.9
40.2
33.9
27.5
21.2
14.8
8.5
2.1
-4.3
-10.6
-17.0
-23.4
-29.7
-36.1
0.047
0.049
0.050
0.052
0.054
0.056
0.057
0.059
0.060
0.062
0.063
0.064
0.068
0.073
0.077
0.081
0.089
0.096
0.104
0.111
0.118
0.126
0.133
0.140
52.1
49.3
46.4
43.6
40.8
38.0
35.1
32.3
33.3
34.3
35.2
36.2
37.6
39.0
40.4
41.8
40.5
39.3
38.0
36.7
33.2
29.8
26.3
22.8
0.471
0.462
0.452
0.442
0.432
0.422
0.413
0.403
0.412
0.421
0.431
0.440
0.458
0.476
0.494
0.512
0.530
0.549
0.567
0.585
0.601
0.618
0.635
0.651
-25.2
-32.7
-40.1
-47.5
-54.9
-62.4
-69.8
-77.2
-84.2
-91.1
-98.1
-105.0
-110.3
-115.5
-120.8
-126.0
-130.8
-135.5
-140.3
-145.0
-149.4
-153.9
-158.3
-162.7
0.371
0.394
0.431
0.485
0.558
0.657
0.789
0.964
1.006
1.064
1.142
1.245
1.202
1.172
1.153
1.146
1.072
1.011
0.962
0.922
0.893
0.867
0.844
0.823
21.2
20.7
20.2
19.7
19.1
18.5
17.9
17.2
16.3
14.8
13.6
12.4
12.1
11.8
11.5
11.0
11.1
11.6
11.7
11.2
10.8
10.4
9.9
9.5
Nov. ´97
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