lm394.pdf

December 1994

LM194/LM394 Supermatch Pair

General Description

The LM194 and LM394 are junction isolated ultra well-

matched monolithic NPN transistor pairs with an order of

magnitude improvement in matching over conventional tran-

sistor pairs. This was accomplished by advanced linear pro-

cessing and a unique new device structure.

Electrical characteristics of these devices such as drift ver-

sus initial offset voltage, noise, and the exponential relation-

ship of base-emitter voltage to collector current closely ap-

proach those of a theoretical transistor. Extrinsic emitter

and base resistances are much lower than presently avail-

able pairs, either monolithic or discrete, giving extremely low

noise and theoretical operation over a wide current range.

Most parameters are guaranteed over a current range of

1 m A to 1 mA and 0V up to 40V collector-base voltage,

ensuring superior performance in nearly all applications.

To guarantee long term stability of matching parameters,

internal clamp diodes have been added across the emitter-

base junction of each transistor. These prevent degradation

due to reverse biased emitter currentÐthe most common

cause of field failures in matched devices. The parasitic iso-

lation junction formed by the diodes also clamps the sub-

strate region to the most negative emitter to ensure com-

plete isolation between devices.

The LM194 and LM394 will provide a considerable improve-

ment in performance in most applications requiring a closely

matched transistor pair. In many cases, trimming can be

eliminated entirely, improving reliability and decreasing

costs. Additionally, the low noise and high gain make this

device attractive even where matching is not critical.

The LM194 and LM394/LM394B/LM394C are available in

an isolated header 6-lead TO-5 metal can package. The

LM394/LM394B/LM394C are available in an 8-pin plastic

dual-in-line package. The LM194 is identical to the LM394

except for tighter electrical specifications and wider temper-

ature range.

Features

Y Emitter-base voltage matched to 50 m V

Y Offset voltage drift less than 0.1 m V/ § C

Y Current gain (h FE ) matched to 2%

Y Common-mode rejection ratio greater than 120 dB

Y Parameters guaranteed over 1 m A to 1 mA collector

current

Y Extremely low noise

Y Superior logging characteristics compared to

conventional pairs

Y Plug-in replacement for presently available devices

Typical Applications

Low Cost Accurate Squ are Ro ot Circuit

I OUT e 10 b 5 .

10 V IN

Low Cost Accurate Squaring Circuit

I OUT e 10 b 6 (V IN ) 2

TL/H/9241±2

TL/H/9241±1

*Trim for full scale accuracy

C 1995 National Semiconductor Corporation

TL/H/9241

RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

(Note 4)

Collector Current

Base-Emitter Current

g 10 mA

Power Dissipation

500 mW

Junction Temperature

LM194

b 55 § Cto a 125 § C

20 mA

LM394/LM394B/LM394C

b 25 § Cto a 85 § C

Collector-Emitter Voltage

V MAX

Storage Temperature Range

b 65 § Cto a 150 § C

Collector-Emitter Voltage

35V

Soldering Information

Metal Can Package (10 sec.)

LM394C

20V

260 § C

Collector-Base Voltage

35V

Dual-In-Line Package (10 sec.)

260 § C

LM394C

20V

Small Outline Package

Vapor Phase (60 sec.) 215 § C

Infrared (15 sec.) 220 § C

See AN-450 ``Surface Mounting and their Effects on Prod-

uct Reliability'' for other methods of soldering surface

mount devices.

Collector-Substrate Voltage

35V

LM394C

20V

Collector-Collector Voltage

35V

LM394C

20V

Electrical Characteristics (T J e 25 § C)

Parameter

Conditions

LM194

LM394

LM394B/394C

Units

Min Typ Max Min Typ Max Min Typ Max

Current Gain (h FE )

V CB e 0V to V MAX (Note 1)

I C e 1 mA

350 700

300 700

225 500

I C e 100 m A

350 550

250 550

200 400

I C e 10 m A

300 450

200 450

150 300

I C e 1 m A

200 300

150 300

100 200

Current Gain Match, V CB e 0V to V MAX

(h FE Match)

I C e 10 m A to 1 mA

0.5 2

0.5 4

1.0 5 %

100 [ D I B ][h FE(MIN) ]

I C

I C e 1 m A

1.0

2.0

Emitter-Base Offset

V CB e 0

25 100

25 150

50 200 m V

Voltage I C e 1 m Ato1mA

Change in Emitter-Base (Note 1)

Offset Voltage vs

I C e 1 m Ato1mA,

10 25

10 50

10 100 m V

Collector-Base Voltage V CB e 0V to V MAX

(CMRR)

Change in Emitter-Base V CB e 0V,

5 25

5 50

5 50 V

Offset Voltage vs

I C e 1 m A to 0.3 mA

Collector Current

Emitter-Base Offset

I C e 10 m A to 1 mA (Note 2)

0.08 0.3

0.08 1.0

0.2 1.5 m V/ § C

Voltage Temperature I C1 e I C2

Drift

V OS Trimmed to 0 at 25 § C

0.03 0.1

0.03 0.3

0.03 0.5 m V/ § C

Logging Conformity

I C e 3nAto300 m A,

150

m V

V CB e 0, (Note 3)

Collector-Base Leakage V CB e V MAX

0.05 0.25

0.05 0.5

0.05 0.5 nA

Collector-Collector

V CC e V MAX

0.1 2.0

0.1 5.0

0.1 5.0 nA

Leakage

Input Voltage Noise

I C e 100 m A, V CB e 0V,

1.8

nV/

f e 100 Hz to 100 kHz

Collector to Emitter

I C e 1 mA, I B e 10 m A

0.2

Saturation Voltage

I C e 1 mA, I B e 100 m A

0.1

Note 1: Collector-base voltage is swept from 0 to V MAX at a collector current of 1 m A, 10 m A, 100 m A, and 1 mA.

Note 2: Offset voltage drift with V OS e 0atT A e 25 § C is valid only when the ratio of I C1 to I C2 is adjusted to give the initial zero offset. This ratio must be held to

within 0.003% over the entire temperature range. Measurements taken at a 25 § C and temperature extremes.

Note 3: Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation.

Note 4: Refer to RETS194X drawing of military LM194H version for specifications.

Typical Applications (Continued)

Fast, Accurate Logging Amplifier, V IN e 10V to 0.1 mV or I IN e 1mAto10nA

TL/H/9241±3

*1k X ( g 1%) at 25 § C, a 3500 ppm/ § C.

Available from Vishay Ultronix,

Grand Junction, CO, Q81 Series.

V OUT eb log 10

V IN

V REF

Voltage Controlled Variable Gain Amplifier

TL/H/9241±4

*R8±R10 and D2 provide a temperature Distortion k 0.1%

independent gain control.

Bandwidth l 1 MHz

G eb 336 V1 (dB)

100 dB gain range

Typical Applications (Continued)

Precision Low Drift Operational Amplifier

Common-mode range 10V

I BIAS 25 nA

I OS 0.5 nA

V OS (untrimmed) 125 m V

( D V OS / D T) 0.2 m V/C

CMRR 120 dB

A VOL 2,500,000

*C 200 pF for unity gain

C 30 pF for A V 10

C 5 pF for A V 100

C 0 pF for AV 1000

TL/H/9241±5

High Accuracy One Quadrant Multiplier/Divider

TL/H/9241±6

V OUT e

(X) (Y)

(Z)

; positive inputs only.

*Typical linearity 0.1%

Typical Applications (Continued)

High Performance Instrumentation Amplifier

*Gain e

10 6

R S

TL/H/9241±7

Performance Characteristics

G e 10,000G e 1,000 G e 100 G e 10

Linearity of Gain ( g 10V Output) s 0.01 s 0.01 s 0.02 s 0.05 %

Common-Mode Rejection Ratio (60 Hz) t 120 t 120 t 110 t 90 dB

Common-Mode Rejection Ratio (1 kHz) t 110 t 110 t 90 t 70 dB

Power Supply Rejection Ratio

a Supply l 110 l 110 l 110 l 110 dB

b Supply l 110 l 110 l 90 l 70 dB

Bandwidth ( b 3 dB) 50 50 50 50 kHz

Slew Rate 0.3 0.3 0.3 0.3 V/ m s

Offset Voltage Drift** s 0.25 s 0.4 2 s 10 m V/ § C

Common-Mode Input Resistance l 10 9 l 10 9 l 10 9 l 10 9 X

Differential Input Resistance l 3x10 8 l 3x10 8 l 3x10 8 l 3x10 8 X

Input Referred Noise (100 Hz s f s 10 kHz) 5

Input Bias Current

75 nA

Input Offset Current

1.5

1.5 nA

Common-Mode Range

g 11 g 11 g 11 g 10 V

Output Swing (R L e 10 k X )

g 13 g 13 g 13 g 13 V

**Assumes s 5 ppm/ § C tracking of resistors

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