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Irl2203n
PD - 9.1366C
IRL2203N
HEXFET ® Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
D
V DSS = 30V
R DS(on) = 0.007
W
G
I D = 116A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
116
I D @ T C = 100°C
Continuous Drain Current, V GS @ 10V
82
A
I DM
Pulsed Drain Current
400
P D @T C = 25°C
Power Dissipation
170
W
Linear Derating Factor
1.1
W/°C
V GS
Gate-to-Source Voltage
±16
V
E AS
Single Pulse Avalanche Energy
390
mJ
I AR
Avalanche Current
60
A
E AR
Repetitive Avalanche Energy
17
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T J
Operating Junction and
-55 to + 175
T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
Max.
Units
R q JC
Junction-to-Case
–––
0.90
R q CS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
R q JA
Junction-to-Ambient
–––
62
8/25/97
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IRL2203N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
––– –––
V
V GS = 0V, I D = 250µA
D
V (BR)DSS /
D
T J Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.007
R DS(on)
Static Drain-to-Source On-Resistance
W
V GS = 10V, I D = 60A
––– ––– 0.01
V GS = 4.5V, I D = 50A
V GS(th)
Gate Threshold Voltage
1.0 ––– –––
V
V DS = V GS , I D = 250µA
g fs
Forward Transconductance
47
––– –––
S
V DS = 25V, I D = 60A
I DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V DS = 30V, V GS = 0V
––– ––– 250
V DS = 24V, V GS = 0V, T J = 150°C
I GSS
Gate-to-Source Forward Leakage
––– ––– 100
nA
V GS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
V GS = -16V
Q g
Total Gate Charge
––– ––– 110
I D = 60A
Q gs
Gate-to-Source Charge
––– ––– 31
nC V DS = 24V
Q gd
Gate-to-Drain ("Miller") Charge
––– ––– 57
V GS = 4.5V, See Fig. 6 and 13
t d(on)
Turn-On Delay Time
–––
15 –––
V DD = 15V
t r
Rise Time
––– 210 –––
ns
I D = 60A
t d(off)
Turn-Off Delay Time
–––
29 –––
R G = 1.8 W, V GS = 4.5V
t f
Fall Time
–––
54 –––
R D = 0.25
W,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
D
L D
Internal Drain Inductance
––– 4.5 –––
nH
G
L S
Internal Source Inductance
––– 7.5 –––
S
C iss
Input Capacitance
––– 3500 –––
V GS = 0V
C oss
Output Capacitance
––– 1400 –––
pF V DS = 25V
C rss
Reverse Transfer Capacitance
––– 690 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
MOSFET symbol
D
––– –––
116
(Body Diode)
showing the
A
Pulsed Source Current
integral reverse
I SM
G
––– –––
400
(Body Diode)
p-n junction diode.
S
V SD
Diode Forward Voltage
––– ––– 1.3
V
T J = 25°C, I S = 60A, V GS = 0V
t rr
Reverse Recovery Time
––– 94 140
ns T J = 25°C, I F = 60A
Q rr
Reverse RecoveryCharge
––– 280 410
nC di/dt = 100A/µs
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
Notes:
max. junction temperature. ( See fig. 11 ) Pulse width £ 300µs; duty cycle £ 2%.
R G = 25 W , I AS = 60A. (See Figure 12) Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
I SD £
60A, di/dt
£
140A/µs, V DD £
V (BR)DSS ,
T J £
175°C
Repetitive rating; pulse width limited by
V DD = 15V, starting T J = 25°C, L = 220µH
199630250.002.png 199630250.003.png 199630250.004.png
IRL2203N
1000
VGS
TO P 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
1000
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
100
10
10
2.5V
2.5V
1
20µs PULSE WIDTH
T = 25°C
J
A
1
20µs PULSE WIDTH
T = 175°C
A
0.1
1
10
100
0.1
1
10
100
V , Drain-to-Source Voltage (V)
DS
V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I = 100A
D
T = 25°C
J
1.5
100
T = 175°C
J
1.0
10
0.5
V = 15V
20µs PULSE W IDTH
DS
1
V = 10V
GS
A
0.0
A
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
V , Gate-to-Source Voltage (V)
GS
T , Junction Tem perature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
J
J
199630250.005.png 199630250.006.png 199630250.007.png
IRL2203N
8000
15
V = 0V , f = 1MHz
C = C + C , C SHO RTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
I = 60A
D
V = 24 V
V = 15 V
12
6000
C is s
C oss
9
4000
6
C rss
2000
3
0
A
0
FOR TEST CIRCUIT
SEE FIGURE 13
A
1
10
100
0
30
60
90
120
150
V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 25°C
J
100
T = 175°C
J
100µs
100
1ms
10
10ms
T = 25°C
T = 175°C
Single Pulse
C
J
10
V = 0V
A
1
A
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
10
100
V , Source-to-Drain Voltage (V)
V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
DS
DS
GS
SD
199630250.008.png 199630250.009.png
IRL2203N
120
R D
V DS
LIMITED BY PACKAGE
100
V GS
D.U.T.
R G
+
- V DD
80
4.5V
60
µs
Duty Factor £ 0.1 %
£ 1
40
Fig 10a. Switching Time Test Circuit
20
V DS
90%
0
25
50
75
100
125
150
175
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
V GS
t d(on) t r
t d(off) t f
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
0.02
SINGLE PULSE
(THERMAL RESPONSE)
1
0.01
2
Notes:
1. Duty factor D = t / t
2. Peak T = P
1
2
J
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse Width
t
t
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