irfbc40.pdf

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IRFBC40, IRFBC42
Semiconductor
IRFBC40,
IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm,
N-Channel Power MOSFETs
January 1998
Features
Description
• 6.2A and 5.4A, 600V
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
•r DS(ON) = 1.2 W and 1.6 W
• Repetitive Avalanche Energy Rated
• Simple Drive Requirements
• Ease of Paralleling
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA17426.
Ordering Information
PART NUMBER
PACKAGE
BRAND
Symbol
IRFBC40
TO-220AB
IRFBC40
D
IRFBC42
TO-220AB
IRFBC42
NOTE: When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
File Number 2157.2
5-1
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IRFBC40, IRFBC42
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified
IRFBC40
IRFBC42
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DS
600
600
V
Drain to Gate Voltage (R GS = 20k
W)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
600
600
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D
6.2
5.4
A
T C = 100 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
3.9
3.4
A
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
25
22
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
±
20
±
20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
125
125
W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
1.0
W/ o C
Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) . . . . . . . . . . . . . . . . . E AS
570
570
mJ
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG -55 to 150
-55 to 150
o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
300
260
300
260
o o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T J = 25 o C to 125 o C.
Electrical Specifications T C = 25 o C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
BV DSS V GS = 0V, I D = 250
m
A, (Figure 11)
600
-
-
V
Gate to Source Threshold Voltage
V GS(TH) V GS = V DS , I D = 250
A
2.0
-
4.0
V
Zero Gate Voltage Drain Current
I DSS
V DS = Rated BV DSS , V GS = 0V
-
-
25
m
A
V DS = 0.8 x Rated BV DSS , V GS = 0V, T J = 125 o C
-
-
250
m
A
On-State Drain Current (Note 4)
I D(ON) V DS > I D(ON) x r DS(ON)MAX , V GS = 10V
IRFBC40
6.2
-
-
A
IRFBC42
5.4
-
-
A
Gate to Source Leakage
I GSS
V GS = ± 20V
-
-
± 100
nA
Drain to Source On Resistance (Note 2)
r DS(ON) V GS = 10V, I D = 3.4A, (Figures 9, 10)
IRFBC40
-
0.97
1.2
W
IRFBC42
-
1.2
1.6
W
Forward Transconductance (Note 4)
g fs
V DS ³
100V, I DS = 3.4A, (Figure 13)
4.7
70
-
S
Turn-On Delay Time
t d(ON) V DD = 300V, I D »
6.2A, R G = 9.1
W,
V GS = 10V,
-
13
20
ns
, (Figures 17, 18)
Switching Speeds are Essentially ndependent of
Operating Temperature
W
Rise Time
t r
-
18
27
ns
Turn-Off Delay Time
t d(OFF)
-
55
83
ns
Fall Time
t f
-
20
30
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q g(TOT) V GS = 10V, I D = 6.2A, V DS = 0.7 x Rated BV DSS,
(Figures 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
40
60
nC
Gate to Source Charge
Q gs
-
5.5
-
nC
Gate to Drain “Miller” Charge
Q gd
-
20
-
nC
Input Capacitance
C ISS
V GS = 0V, V DS = 25V, f = 1.0MHz, (Figure 12)
-
1300
-
pF
Output Capacitance
C OSS
-
160
-
pF
Reverse Transfer Capacitance
C RSS
-
45
-
pF
5-2
m
R L = 47
214295458.006.png 214295458.007.png 214295458.008.png
IRFBC40, IRFBC42
Electrical Specifications T C = 25 o C, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Internal Drain Inductance
L D
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L S
Measured From the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
-
7.5
-
nH
D
L D
G
L S
S
Thermal Resistance Junction to Case
R
q
JC
-
-
1.0
o C/W
Thermal Resistance Junction to Ambient
R
q
JA
Typical Socket Mount
-
-
80
o C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Continuous Source to Drain Current
I SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
D
-
-
6.2
A
Pulse Source to Drain Current
(Note 3)
I SDM
-
-
25
A
G
S
Diode Source to Drain Voltage (Note 2)
V SD
T J = 25 o C, I SD = 6.2A, V GS = 0V, (Figure 8)
-
-
1.5
V
Reverse Recovery Time
t rr
T J = 25 o C, I SD = 6.2A, dI SD /dt = 100A/ m s
200
450
940
ns
Reverse Recovery Charge
Q RR
T J = 25 o C, I SD = 6.2A, dI SD /dt = 100A/ m s
1.8
3.8
8.0
m C
NOTES:
2. Pulse test: pulse width £ 300 m s, duty cycle £ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V DD = 50V, starting T J = 25 o C, L = 16mH, R G = 25 W , peak I AS = 6.8A. (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
10
1.0
8
0.8
6
IRFBC40
0.6
4
IRFBC42
0.4
0.2
2
0
0
50
100
150
0
25
50
75
100
125
150
T C , CASE TEMPERATURE ( o C)
T C, CASE TEMPERATURE ( o C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
5-3
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IRFBC40, IRFBC42
Typical Performance Curves Unless Otherwise Specified (Continued)
1
0.5
0.2
0.1
0.1
0.02
0.01
P DM
SINGLE PULSE
10 -2
t 1
t 2
t 2
NOTES:
DUTY FACTOR: D = t 1 /t 2
PEAK T J = P DM x Z
JC x R
JC + T C
q
q
10 -3
10 -5
10 -4
10 -3
10 -2
0.1
1
10
t 1 , RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
10 2
OPERATION IN THIS REGION
IS LIMITED BY r DS(ON)
10
80 m s PULSE TEST
I RFBC40
V GS = 5.5V
IRFBC42
10 m s
8
V GS = 10V
V GS = 6.0V
10
IRFBC40
100
m
s
6
IRFBC42
V GS = 5.0V
1ms
4
1
10ms
T C = 25 o C
2
V GS = 4.5V
T J = MAX RATED
SINGLE PULSE
DC
V GS = 4.0V
0.1
0
10 2
10 3
1
10
0
60
120
180
240
300
V DS , DRAIN TO SOURCE VOLTAGE (V)
V DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
10
80
m
s PULSE TEST
V GS =10V
V GS = 6.0V
10
V DS ³ 100V
80
m
s PULSE TEST
8
V GS = 5.5V
1
6
V GS = 5.0V
T J = 150 o C
T J = 25 o C
4
0.1
2
V GS = 4.5V
V GS = 4.0V
0
0
3
6
9
12
15
10 -2
0
2
4
6
8
10
V DS, DRAIN TO SOURCE VOLTAGE (V)
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
5-4
0.05
0.02
214295458.025.png 214295458.026.png 214295458.027.png
IRFBC40, IRFBC42
Typical Performance Curves Unless Otherwise Specified (Continued)
10 2
5.0
80
m
s PULSE TEST
4.0
10
3.0
T J = 150 o C
V GS = 10V
V GS = 20V
T J = 25 o C
2.0
1
1.0
0.1
0
0
0.3
0.6
0.9
1.2
1.5
0
6
12
18
24
30
V SD , SOURCE TO DRAIN VOLTAGE (V)
I D, DRAIN CURRENT (A)
FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
3.0
I D = 3.4A
V GS = 10V
1.25
I D = 250 m A
2.4
1.15
1.8
1.05
1.2
0.95
0.6
0.85
0
-60
-40
-20
0
20 40
60
80
100
120
140
160
0.75
-60
-40
-20
0
20
40
60
80
100
120 140
160
T J , JUNCTION TEMPERATURE ( o C)
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
10
V GS = 0V, f = 1MHz
C ISS = C GS + C GD
C RSS = C GD
C OSS »
V DS ³ 100V
80 m s PULSE TEST
T J = 25 o C
2400
8
C DS + C GD
1800
C ISS
6
T J = 150 o C
1200
4
C OSS
600
2
C RSS
0
0
2
5
10
20
50
10 2
0
0
2
4
6
8
10
V DS, DRAIN TO SOURCE VOLTAGE (V)
I D, DRAIN CURRENT (A)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT
5-5
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