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199615903 UNPDF
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG97
NPN 5 GHz wideband transistor
Product specication
File under Discrete Semiconductors, SC14
September 1995
199615903.051.png
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFG97
DESCRIPTION
PINNING
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It features excellent output voltage
capabilities, and is primarily intended
for use in MATV applications.
PNP complement is the BFG31.
PIN
DESCRIPTION
age
4
1
emitter
2
base
3
emitter
4
collector
1
2
3
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V CBO
collector-base voltage
open emitter
-
-
20
V
V CEO
collector-emitter voltage
open base
-
-
15
V
I C
DC collector current
-
-
100
mA
P tot
total power dissipation
up to T s = 125 ° C (note 1)
-
-
1
W
h FE
DC current gain
I C = 70 mA; V CE = 10 V; T j =25
°
C5 0
-
f T
transition frequency
I C = 70 mA; V CE = 10 V;
f = 500 MHz; T amb =25
-
5.5
-
GHz
°
C
G UM
maximum unilateral power gain
I C = 70 mA; V CE = 10 V;
f = 500 MHz; T amb =25
-
16
-
dB
°
C
I C = 70 mA; V CE = 10 V;
f = 800 MHz; T amb =25
-
12
-
dB
°
C
V o
output voltage
I C = 70 mA; V CE = 10 V;
d im = - 60 dB; R L =75 W ;
f (p + q - r) = 793.25 MHz; T amb =25
-
700
-
mV
°
C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
20
V
V CEO
collector-emitter voltage
open base
-
15
V
V EBO
emitter-base voltage
open collector
-
3
V
I C
DC collector current
-
100
mA
P tot
total power dissipation
up to T s = 125
C (note 1)
-
1
W
T stg
storage temperature
-
65
150
°
C
T j
junction temperature
-
175
°
C
Note
1. T s is the temperature at the soldering point of the collector tab.
September 1995
2
°
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Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFG97
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R th j-s
thermal resistance from junction to
soldering point
up to T s = 125
°
C (note 1)
50 K/W
Note
1. T s is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T j =25
C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB = 10 V
-
-
100
nA
h FE
DC current gain
I C = 70 mA; V CE = 10 V
25
80
-
f T
transition frequency
I C = 70 mA; V CE = 10 V;
f = 500 MHz; T amb =25
-
5.5
-
GHz
°
C
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
1.5
-
pF
C e
emitter capacitance
I C =i c = 0; V EB = 0.5 V; f = 1 MHz
-
6.5
-
pF
C re
feedback capacitance
I C = 0; V CE = 10 V; f = 1 MHz
-
1
-
pF
G UM
maximum unilateral power gain
(note 1)
I C = 70 mA; V CE = 10 V;
f = 500 MHz; T amb =25
-
16
-
dB
°
C
I C = 70 mA; V CE = 10 V;
f = 800 MHz; T amb =25
-
12
-
dB
°
C
V o
output voltage
note 2
-
750
-
mV
note 3
-
700
-
mV
d 2
second order intermodulation
distortion
note 4
-
-
56
-
dB
note 5
-
-
53
-
dB
Notes
1. G UM is the maximum unilateral power gain, assuming S 12 is zero and
S 21
2
G UM
=
10 log
-------------------------------------------------------------- dB.
æ
2
ö
æ
2
ö
1S 11
–
1S 22
–
è
ø
è
ø
2. d im =
-
60 dB (DIN 45004B); I C = 70 mA; V CE = 10 V; R L =75
W
; T amb =25
°
C
V p =V o at d im =
-
60 dB;
6 dB; f p = 445.25 MHz;
V r =V o - 6 dB; f q = 453.25 MHz; f r = 455.25 MHz;
measured at f (p + q - r) = 443.25 MHz.
3. d im =
V q =V o -
-
60 dB (DIN 45004B); I C = 70 mA; V CE = 10 V; R L =75
W
; T amb =25
°
C
V p =V o at d im = - 60 dB;
V q =V o -
6 dB; f p = 795.25 MHz;
V r =V o -
6 dB; f q = 803.25 MHz; f r = 805.25 MHz;
measured at f (p + q - r) = 793.25 MHz.
4. I C = 70 mA; V CE = 10 V; R L =75
C;
V p =V q =V o = 50 dBmV; f (p + q) = 450 MHz; f p = 50 MHz; f q = 400 MHz.
5. I C = 70 mA; V CE = 10 V; R L =75
W
; T amb =25
°
C;
V p =V q =V o = 50 dBmV; f (p + q) = 810 MHz; f p = 250 MHz; f q = 560 MHz.
W
; T amb =25
°
September 1995
3
°
199615903.016.png
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFG97
handbook, full pagewidth
V CC
C7
C4
L2
L4
V BB
L6
C8
C3
L5
output
75
R1
R2
W
C1
L1
L3
input
75
W
DUT
C2
C5
C6
R3
R4
MBB807
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C2, C3, C7, C8 multilayer ceramic
capacitor
10 nF
2222 590 08627
C1, C4, C6
multilayer ceramic
capacitor
1.2 pF
2222 851 12128
C5 (note 1)
miniature ceramic plate
capacitor
10 nF
2222 629 08103
L1 (note 1)
0.5 turns 0.4 mm copper
wire
int. dia. 3 mm
L2
microstripline
75 W
length 14 mm; width 2.5 mm
L3
microstripline
75
W
length 8 mm; width 2.5 mm
L4, L5 (note 1) 1.5 turns 0.4 mm copper
wire
int. dia. 3 mm;
winding pitch 1 mm
L6
microstripline
75 W
length 19 mm; width 2.5 mm
L7
Ferroxcube choke
5
m
H
3122 108 20153
R1
metal lm resistor
10 k
W
2322 180 73103
R2 (note 1)
metal lm resistor
220
W
2322 180 73221
R3, R4
metal lm resistor
30 W
2322 180 73309
Notes
The circuit has been built on a double copper-clad printed circuit board with PTFE dielectric (
e r = 2.2); thickness 1
¤ 16 inch;
m.
1. Components C5, L1, L4, L5, and R2 are mounted on the underside of the PCB.
´
35
m
September 1995
4
thickness of copper sheet 2
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Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFG97
handbook, full pagewidth
V BB
V CC
C3
C7
R1
R3
L7
75
input
C2
L1
L5
C8
75
output
L2
L3
L6
C1
C4
C6
R4
C5
R2
L4
MEA971
handbook, full pagewidth
80 mm
60 mm
MEA969
handbook, full pagewidth
80 mm
60 mm
mounting
screws
M 2.5 (8x)
MEA970
Fig.3 Intermodulation distortion and second order intermodulation distortion printed circuit board.
September 1995
5
W
W
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