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SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC546/D
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2 3
Rating
Symbol
BC
546
BC
547
BC
548
Unit
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Collector – Emitter Voltage
V CEO
65
45
30
Vdc
Collector – Base Voltage
V CBO
80
50
30
Vdc
Emitter – Base Voltage
V EBO
6.0
Vdc
Collector Current — Continuous
I C
100
mAdc
Total Device Dissipation @ T A = 25
°
C
P D
625
5.0
mW
mW/
Derate above 25
°
C
°
C
Total Device Dissipation @ T C = 25
°
C
P D
1.5
12
Watt
mW/
Derate above 25
°
C
°
C
Operating and Storage Junction
Temperature Range
T J , T stg
– 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R JA
200
°
C/W
Thermal Resistance, Junction to Case
R JC
83.3
° C/W
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
BC546
V (BR)CEO
65
45
30
—
—
—
—
—
—
V
(I C = 1.0 mA, I B = 0)
BC547
BC548
Collector – Base Breakdown Voltage
BC546
V (BR)CBO
80
50
30
—
—
—
—
—
—
V
(I C = 100
m
Adc)
BC547
BC548
Emitter – Base Breakdown Voltage
BC546
V (BR)EBO
6.0
6.0
6.0
—
—
—
—
—
—
V
(I E = 10 A, I C = 0)
BC547
BC548
Collector Cutoff Current
(V CE = 70 V, V BE = 0)
BC546
I CES
—
—
—
—
0.2
0.2
0.2
—
15
15
15
4.0
nA
(V CE = 50 V, V BE = 0)
BC547
(V CE = 35 V, V BE = 0)
BC548
(V CE = 30 V, T A = 125 ° C)
BC546/547/548
m A
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
W Motorola, Inc. 1996
214247354.006.png
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I C = 10
h FE
—
m
A, V CE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
90
150
270
—
—
—
(I C = 2.0 mA, V CE = 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
—
—
—
180
290
520
450
800
800
220
450
800
(I C = 100 mA, V CE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
120
180
300
—
—
—
Collector – Emitter Saturation Voltage
(I C = 10 mA, I B = 0.5 mA)
(I C = 100 mA, I B = 5.0 mA)
(I C = 10 mA, I B = See Note 1)
V CE(sat)
V
—
—
—
0.09
0.2
0.3
0.25
0.6
0.6
Base – Emitter Saturation Voltage
(I C = 10 mA, I B = 0.5 mA)
V BE(sat)
—
0.7
—
V
Base–Emitter On Voltage
(I C = 2.0 mA, V CE = 5.0 V)
(I C = 10 mA, V CE = 5.0 V)
V BE(on)
V
0.55
—
—
—
0.7
0.77
SMALL–SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(I C = 10 mA, V CE = 5.0 V, f = 100 MHz)
f T
MHz
BC546
BC547
BC548
150
150
150
300
300
300
—
—
—
Output Capacitance
(V CB = 10 V, I C = 0, f = 1.0 MHz)
C obo
—
1.7
4.5
pF
Input Capacitance
(V EB = 0.5 V, I C = 0, f = 1.0 MHz)
C ibo
—
10
—
pF
Small–Signal Current Gain
(I C = 2.0 mA, V CE = 5.0 V, f = 1.0 kHz)
h fe
—
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
Noise Figure
(I C = 0.2 mA, V CE = 5.0 V, R S = 2 k ,
NF
dB
BC546
—
—
—
2.0
2.0
2.0
10
10
10
f = 1.0 kHz,
D
f = 200 Hz)
BC547
BC548
Note 1: I B is value for which I C = 11 mA at V CE = 1.0 V.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
214247354.007.png 214247354.008.png 214247354.009.png
2.0
1.0
1.5
V CE = 10 V
T A = 25
0.9
T A = 25 ° C
°
C
0.8
V BE(sat) @ I C /I B = 10
1.0
0.8
0.7
0.6
V BE(on) @ V CE = 10 V
0.6
0.5
0.4
0.4
0.3
0.3
0.2
V CE(sat) @ I C /I B = 10
0.1
0.2
0.2
0.5 1.0
2.0
5.0
10
20
50
100
200
0
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10 20
30
50
70
100
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.0
T A = 25 ° C
–55 ° C to +125 ° C
1.6
1.2
I C = 200 mA
1.6
1.2
I C =
10 mA
I C =
20 mA
I C = 50 mA
I C = 100 mA
2.0
0.8
2.4
0.4
2.8
0
0.02
0.1
1.0
10
20
0.2
1.0
10
100
I B , BASE CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
BC547/BC548
10
400
300
7.0
T A = 25 ° C
200
5.0
C ib
3.0
100
V CE = 10 V
T A = 25 ° C
80
C ob
60
2.0
40
30
1.0
0.4 0.6
0.8
1.0
2.0
4.0
6.0
8.0
10
20
40
20
0.5
0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
50
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
214247354.001.png
BC547/BC548
1.0
V CE = 5 V
T A = 25
T A = 25
°
C
°
C
0.8
V BE(sat) @ I C /I B = 10
2.0
0.6
V BE @ V CE = 5.0 V
1.0
0.4
0.5
0.2
0.2
V CE(sat) @ I C /I B = 10
0.1
0.2
1.0
10
100
0
0.2
0.5
1.0
2.0
5.0
10
20
50 100
200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
–1.0
T A = 25 ° C
1.6
–1.4
20 mA
50 mA
100 mA
200 mA
1.2
–1.8
q VB for V BE
0.8
I C =
10 mA
–2.2
–55 ° C to 125 ° C
0.4
–2.6
0
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
–3.0
0.2
0.5
1.0
2.0
5.0
10
20
50 100
200
I B , BASE CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
BC546
40
T A = 25
°
C
500
V CE = 5 V
T A = 25
°
C
20
C ib
200
10
100
6.0
50
4.0
C ob
20
2.0
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
5.0
10
50 100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
214247354.002.png
PACKAGE DIMENSIONS
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATIN G
PLANE
K
INCHES
MILLIMETERS
DIM MIN
MAX
MIN
MAX
D
A
0.175 0.205
4.45
5.20
B
0.170 0.210
4.32
5.33
C
0.125 0.165
3.18
4.19
X X
J
D
0.016 0.022
0.41
0.55
F
0.016 0.019
0.41
0.48
G
G 0.045 0.055
1.15
1.39
H
H
0.095 0.105
2.42
2.66
SECTION X–X
J
0.015 0.020
0.39
0.50
V
C
K
0.500
––– 12.70
–––
L
0.250
–––
6.35
–––
1
N
0.080 0.105
2.04
2.66
N
P
––– 0.100
–––
2.54
R
0.115
–––
2.93
–––
N
V
0.135
–––
3.43
–––
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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